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1. WO2013007981 - ION DETECTOR

Publication Number WO/2013/007981
Publication Date 17.01.2013
International Application No. PCT/GB2012/051518
International Filing Date 29.06.2012
IPC
G01T 1/20 2006.01
GPHYSICS
01MEASURING; TESTING
TMEASUREMENT OF NUCLEAR OR X-RADIATION
1Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
16Measuring radiation intensity
20with scintillation detectors
CPC
G01T 1/2006
GPHYSICS
01MEASURING; TESTING
TMEASUREMENT OF NUCLEAR OR X-RADIATION
1Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
16Measuring radiation intensity
20with scintillation detectors
2006using a combination of a scintillator and photodetector which measures the means radiation intensity
G01T 1/2018
GPHYSICS
01MEASURING; TESTING
TMEASUREMENT OF NUCLEAR OR X-RADIATION
1Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
16Measuring radiation intensity
20with scintillation detectors
2018Scintillation-photodiode combinations
H01J 49/025
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
49Particle spectrometers or separator tubes
02Details
025Detectors specially adapted to particle spectrometers
Applicants
  • ISIS INNOVATION LIMITED [GB]/[GB] (AllExceptUS)
  • BROUARD, Mark [GB]/[GB] (UsOnly)
  • VALLANCE, Claire [GB]/[GB] (UsOnly)
  • NOMEROTSKI, Andrei [RU]/[GB] (UsOnly)
  • TURCHETTA, Renato [IT]/[GB] (UsOnly)
Inventors
  • BROUARD, Mark
  • VALLANCE, Claire
  • NOMEROTSKI, Andrei
  • TURCHETTA, Renato
Agents
  • BARKER BRETTELL LLP
Priority Data
1111915.312.07.2011GB
1118614.527.10.2011GB
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) ION DETECTOR
(FR) DÉTECTEUR D'IONS
Abstract
(EN)
An ion detector (1) comprising a semi-conductor avalanche photodiode (4) and a scintillation layer (2), the scintillation layer having a thickness in the range 0.1 mm to 00 mm, the scintillation layer arranged to generate photons towards the photodiode resulting from ions impinging on the scintillation layer.
(FR)
L'invention concerne un détecteur d'ions comprenant une photodiode à avalanche de semi-conducteurs et une couche de scintillation, la couche de scintillation ayant une épaisseur comprise entre 0,1 μm et 100 μm et étant agencée de façon à générer des photons en direction de la photodiode découlant des ions affectant la couche de scintillation.
Also published as
Latest bibliographic data on file with the International Bureau