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1. WO2013006242 - ATOMIC LAYER DEPOSITION OF TRANSITION METAL THIN FILMS

Publication Number WO/2013/006242
Publication Date 10.01.2013
International Application No. PCT/US2012/040892
International Filing Date 05.06.2012
IPC
H01L 21/44 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
44Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/36-H01L21/428158
CPC
C23C 16/18
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
06characterised by the deposition of metallic material
18from metallo-organic compounds
C23C 16/45553
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
455characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
45523Pulsed gas flow or change of composition over time
45525Atomic layer deposition [ALD]
45553characterized by the use of precursors specially adapted for ALD
Applicants
  • WAYNE STATE UNIVERSITY [US]/[US] (AllExceptUS)
  • WINTER, Charles, H [US]/[US] (UsOnly)
  • KNISLEY, Thomas, J. [US]/[US] (UsOnly)
  • ARIYASENA, Thiloka [US]/[US] (UsOnly)
Inventors
  • WINTER, Charles, H
  • KNISLEY, Thomas, J.
  • ARIYASENA, Thiloka
Agents
  • PROSCIA, James, W.
Priority Data
61/504,85906.07.2011US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) ATOMIC LAYER DEPOSITION OF TRANSITION METAL THIN FILMS
(FR) DÉPÔT DE COUCHE ATOMIQUE DE FILMS MINCES DE MÉTAL DE TRANSITION
Abstract
(EN)
An atomic layer deposition method for forming metal films on a substrate comprises a deposition cycle including: a) contacting a substrate with a vapor of a metal-containing compound described by formula 1 for a first predetermined pulse time to form a first modified surface: MLn (1) wherein: n is 1 to 8; M is a transition metal; L is a ligand; b) contacting the first modified surface with an acid for a second predetermined pulse time to form a second modified surface; and c) contacting the second modified surface with a reducing agent for a third predetermined pulse time to form a metal layer.
(FR)
L'invention concerne un procédé de dépôt de couche atomique pour former des films de métal sur un substrat, lequel procédé comprend un cycle de dépôt consistant à : a) mettre en contact un substrat avec une vapeur d'un composé contenant un métal, décrit par la formule 1, pendant une première durée d'impulsion prédéterminée, pour former une première surface modifiée : MLn (1), dans laquelle : n est 1 à 8 ; M est un métal de transition ; L est un ligand ; b) mettre en contact la première surface modifiée avec un acide pendant une deuxième durée d'impulsion prédéterminée, pour former une seconde surface modifiée ; et c) mettre en contact la seconde surface modifiée avec un agent réducteur pendant une troisième durée d'impulsion prédéterminée, pour former une couche de métal.
Also published as
DE1120120028716
DE112012002871
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