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1. (WO2012177374) SILICIDE MICROMECHANICAL DEVICE AND METHODS TO FABRICATE SAME
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2012/177374 International Application No.: PCT/US2012/040357
Publication Date: 27.12.2012 International Filing Date: 01.06.2012
IPC:
H01L 21/31 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
Applicants:
INTERNATIONAL BUSINESS MACHINES CORPORATION [US/US]; New Orchard Road Armonk, NY 10504, US (AllExceptUS)
GUILLORN, Michael A. [US/US]; US (UsOnly)
JOSEPH, Eric A. [US/US]; US (UsOnly)
LIU, Fei [CN/US]; US (UsOnly)
ZHANG, Zeng [CN/US]; US (UsOnly)
Inventors:
GUILLORN, Michael A.; US
JOSEPH, Eric A.; US
LIU, Fei; US
ZHANG, Zeng; US
Agent:
MAURI, Robert J.; Harrington & Smith Attorneys at Law, LLC 4 Research Drive Shelton, CT 06484-6212, US
Priority Data:
13/164,12620.06.2011US
Title (EN) SILICIDE MICROMECHANICAL DEVICE AND METHODS TO FABRICATE SAME
(FR) DISPOSITIF MICROMÉCANIQUE DE SILICIURE ET PROCÉDÉS DE FABRICATION DE CELUI-CI
Abstract:
(EN) A method is disclosed to fabricate an electro-mechanical device such as a MEMS or NEMS switch. The method includes providing a silicon layer disposed over an insulating layer that is disposed on a silicon substrate; releasing a portion of the silicon layer from the insulating layer so that it is at least partially suspended over a cavity in the insulating layer; depositing a metal (e.g., Pt) on at least one surface of at least the released portion of the silicon layer and, using a thermal process, fully siliciding at least the released portion of the silicon layer using the deposited metal. The method eliminates silicide-induced stress to the released Si member, as the entire Si member is silicided. Furthermore no conventional wet chemical etch is used after forming the fully silicided material thereby reducing a possibility of causing corrosion of the silicide and an increase in stiction.
(FR) L'invention concerne un procédé de fabrication d'un dispositif électromécanique tel qu'un MEMS ou un commutateur NEMS. Le procédé comprend les étapes consistant à: prévoir une couche de silicium, formée sur une couche isolante placée sur un substrat de silicium; libérer une partie de la couche de silicium de la couche isolante, de sorte que ladite partie soit au moins partiellement suspendue au-dessus d'une cavité de la couche isolante; déposer un métal (p. ex. Pt) sur au moins une surface d'au moins la partie libérée de la couche de silicium, et, au moyen d'un procédé thermique, siliciurer entièrement au moins la partie libérée de la couche de silicium au moyen du métal déposé. Ce procédé permet d'éliminer la contrainte induite par le siliciure sur l'élément de Si libéré, car l'élément de Si entier est siliciuré. De plus, aucune gravure chimique classique par voie humide n'est utilisée après la formation de la matière entièrement siliciurée, ce qui permet de réduire les risques de corrosion du siliciure et d'augmentation du frottement statique d'adhérence.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
CN103563057DE112012001813