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1. (WO2012177265) HIGH-RELIABILITY HIGH-SPEED MEMRISTOR
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2012/177265 International Application No.: PCT/US2011/041881
Publication Date: 27.12.2012 International Filing Date: 24.06.2011
IPC:
H01L 27/115 (2006.01) ,H01L 21/8247 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
10
including a plurality of individual components in a repetitive configuration
105
including field-effect components
112
Read-only memory structures
115
Electrically programmable read-only memories
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
8232
Field-effect technology
8234
MIS technology
8239
Memory structures
8246
Read-only memory structures (ROM)
8247
electrically-programmable (EPROM)
Applicants:
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. [US/US]; 11445 Compaq Center Drive W Houston, Texas 77070, US (AllExceptUS)
MIAO, Feng [CN/US]; US (UsOnly)
YANG, Jianhua [CN/US]; US (UsOnly)
STRACHAN, John Paul [US/US]; US (UsOnly)
YI, Wei [CN/US]; US (UsOnly)
RIBEIRO, Gilberto Medeiros [BR/US]; US (UsOnly)
WILLIAMS, R. Stanley [US/US]; US (UsOnly)
Inventors:
MIAO, Feng; US
YANG, Jianhua; US
STRACHAN, John Paul; US
YI, Wei; US
RIBEIRO, Gilberto Medeiros; US
WILLIAMS, R. Stanley; US
Agent:
CHANG, Yeh Kurt; 3404 E Harmony Road Fort Collins, Colorado 80528-9599, US
Priority Data:
Title (EN) HIGH-RELIABILITY HIGH-SPEED MEMRISTOR
(FR) MEMRISTANCE À GRANDE VITESSE ET GRANDE FIABILITÉ
Abstract:
(EN) A memristor has a first electrode, a second electrode parallel to the first electrode, and a switching layer disposing between the first and second electrodes. The switching layer contains a conduction channel and a reservoir zone. The conduction channel has a Fermi glass material with a variable concentration of mobile ions. The reservoir zone is laterally disposed relative to the conduction channel, and functions as a source/sink of mobile ions for the conduction channel. In the switching operation, under the cooperative driving force of both electric field and thermal effects, the mobile ions are moved into or out of the laterally disposed reservoir zone to vary the concentration of the mobile ions in the conduction channel to change the conductivity of the Fermi glass material.
(FR) La memristance selon l'invention a une première électrode, une seconde électrode parallèle à la première électrode, et une couche de commutation entre les première et seconde électrodes. La couche de commutation contient un canal de conduction et une zone de réservoir. Le canal de conduction a un matériau de verre de Fermi avec une concentration variable d'ions mobiles. La zone de réservoir est disposée latéralement par rapport au canal de conduction, et fonctionne comme source/puits d'ions mobiles pour le canal de conduction. Dans l'opération de commutation, sous la force d'entraînement coopérative du champ électrique et des effets thermiques, les ions mobiles sont déplacés dans ou hors de la zone de réservoir disposée latéralement pour faire varier la concentration des ions mobiles dans le canal de conduction pour changer la conductivité du matériau de verre de Fermi.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP2724372US20140112059KR1020140026616