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1. (WO2012176905) METHOD FOR FORMING CONDUCTIVE FILM, CONDUCTIVE FILM, INSULATION METHOD, AND INSULATION FILM
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2012/176905 International Application No.: PCT/JP2012/066069
Publication Date: 27.12.2012 International Filing Date: 22.06.2012
IPC:
H01B 13/00 (2006.01) ,G09F 9/30 (2006.01) ,H01L 21/28 (2006.01) ,H01L 21/314 (2006.01) ,H01L 21/3205 (2006.01) ,H01L 21/768 (2006.01) ,H01L 23/532 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
B
CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
13
Apparatus or processes specially adapted for manufacturing conductors or cables
G PHYSICS
09
EDUCATING; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
F
DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
9
Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
30
in which the desired character or characters are formed by combining individual elements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314
Inorganic layers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3205
Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
768
Applying interconnections to be used for carrying current between separate components within a device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
52
Arrangements for conducting electric current within the device in operation from one component to another
522
including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
532
characterised by the materials
Applicants:
株式会社クラレ Kuraray Co., Ltd. [JP/JP]; 岡山県倉敷市酒津1621番地 1621, Sakazu, Kurashiki-shi, Okayama 7100801, JP (AllExceptUS)
田邊 裕史 TANABE Hirofumi [JP/JP]; JP (UsOnly)
大竹 富明 OTAKE Tomiaki [JP/JP]; JP (UsOnly)
松木 浩志 MATSUGI Hiroshi [JP/JP]; JP (UsOnly)
Inventors:
田邊 裕史 TANABE Hirofumi; JP
大竹 富明 OTAKE Tomiaki; JP
松木 浩志 MATSUGI Hiroshi; JP
Agent:
宇高 克己 UDAKA Katsuki; 東京都千代田区神田佐久間町1-14第二東ビル5階 No2, Azuma Bldg. 5fl, 14, Kandasakumacho 1-chome, Chiyoda-ku, Tokyo 1010025, JP
Priority Data:
2011-14120524.06.2011JP
Title (EN) METHOD FOR FORMING CONDUCTIVE FILM, CONDUCTIVE FILM, INSULATION METHOD, AND INSULATION FILM
(FR) PROCÉDÉ DE FORMATION D'UN FILM CONDUCTEUR, FILM CONDUCTEUR, PROCÉDÉ D'ISOLATION ET FILM ISOLANT
(JA) 導電膜形成方法、導電膜、絶縁化方法、及び絶縁膜
Abstract:
(EN) The purpose of the present invention is to provide a high-resolution conductive pattern. A method for forming a conductive film of a prescribed pattern, comprising a step in which a conductive carbon nanotube layer is disposed and an ultraviolet ray irradiation step in which ultraviolet rays are irradiated on locations other than areas corresponding to the prescribed pattern, on the conductive carbon nanotube layer disposed in said step. In said method, the conductive carbon nanotube in the ultraviolet ray irradiation area is modified to become insulating and the conductive carbon nanotube in the area not yet irradiated by ultraviolet rays remains conductive.
(FR) L'objet de la présente invention est de fournir un motif conducteur à haute résolution. L'invention concerne un procédé de formation d'un film conducteur d'un motif prescrit, comprenant une étape au cours de laquelle une couche de nanotube de carbone conducteur est disposée et une étape d'exposition à un rayonnement ultraviolet au cours de laquelle des rayons ultraviolets sont émis sur des emplacements différents des zones correspondant au motif prescrit, sur la couche de nanotube de carbone conducteur disposée au cours de ladite étape. Au cours dudit procédé, le nanotube de carbone conducteur dans la zone d'exposition à un rayonnement ultraviolet est modifié pour devenir isolant et le nanotube de carbone conducteur dans la zone non encore exposée aux rayons ultraviolets reste conducteur.
(JA) 解像度が高い導電性パターンを提供することである。導電性カーボンナノチューブ層が設けられる工程と、前記工程で設けられた導電性カーボンナノチューブ層の所定パターン対応個所以外の領域に紫外線が照射される紫外線照射工程とを具備し、紫外線照射領域の導電性カーボンナノチューブが絶縁性に変性し、紫外線未照射領域の導電性カーボンナノチューブが導電性を保持している所定パターンの導電膜形成方法。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
CN103650067EP2725587US20140120027JPWO2012176905KR1020140014292