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1. (WO2012176817) BASE HAVING TRANSPARENT CONDUCTIVE OXIDE FILM
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2012/176817 International Application No.: PCT/JP2012/065775
Publication Date: 27.12.2012 International Filing Date: 20.06.2012
IPC:
H01L 31/04 (2006.01) ,H01B 5/14 (2006.01) ,H01L 21/28 (2006.01) ,H01L 21/285 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
B
CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
5
Non-insulated conductors or conductive bodies characterised by their form
14
comprising conductive layers or films on insulating-supports
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
283
Deposition of conductive or insulating materials for electrodes
285
from a gas or vapour, e.g. condensation
Applicants:
旭硝子株式会社 ASAHI GLASS COMPANY, LIMITED [JP/JP]; 東京都千代田区丸の内一丁目5番1号 5-1, Marunouchi 1-chome, Chiyoda-ku, Tokyo 1008405, JP (AllExceptUS)
東 誠二 HIGASHI, Seiji [JP/JP]; JP (UsOnly)
Inventors:
東 誠二 HIGASHI, Seiji; JP
Agent:
泉名 謙治 SENMYO, Kenji; 東京都千代田区神田紺屋町17番地 SIA神田スクエア4階 4th Floor, SIA Kanda Square, 17, Kanda-konyacho, Chiyoda-ku, Tokyo 1010035, JP
Priority Data:
2011-13606920.06.2011JP
Title (EN) BASE HAVING TRANSPARENT CONDUCTIVE OXIDE FILM
(FR) BASE AYANT UN FILM D'OXYDE CONDUCTEUR TRANSPARENT
(JA) 透明導電性酸化物膜付き基体
Abstract:
(EN) In a base having a transparent conductive oxide film, wherein an overcoat film is provided on the transparent conductive oxide film, an ohmic contact is established at the interface between the transparent conductive oxide film and the overcoat film. A base having a transparent conductive oxide film, wherein a transparent conductive oxide film is formed on a base and an overcoat film is formed on the transparent conductive oxide film respectively by an atmospheric pressure CVD method. The base having a transparent conductive oxide film is characterized in that: the transparent conductive oxide film is composed of a fluorine-doped SnO2 film, which contains fluorine at a molar ratio of 0.0001-0.09 relative to the tin oxide (SnO2), in at least a portion that is in contact with the overcoat film; the overcoat film is mainly composed of titanium oxide (TiO2) and contains tin oxide; and the Sn/(Sn + Ti) molar ratio in the overcoat film is 0.05 or more but less than 0.5.
(FR) Dans une base ayant un film d'oxyde conducteur transparent, dans laquelle un film de couverture est disposé sur le film d'oxyde conducteur transparent, un contact ohmique est établi à l'interface entre le film d'oxyde conducteur transparent et le film de couverture. L'invention concerne une base ayant un film d'oxyde conducteur transparent, dans laquelle un film d'oxyde conducteur transparent est formé sur une base et un film de couverture est formé sur le film d'oxyde conducteur transparent respectivement par un procédé de dépôt chimique en phase vapeur (CVD) à pression atmosphérique. La base ayant un film d'oxyde conducteur transparent est caractérisée en ce que : le film d'oxyde conducteur transparent est composé d'un film de SnO2 dopé au fluor, qui contient du fluor à un rapport molaire de 0,0001-0,09 par rapport à l'oxyde d'étain (SnO2), dans au moins une partie qui est en contact avec le film de couverture ; le film de couverture est principalement composé d'oxyde de titane (TiO2) et contient de l'oxyde d'étain ; et le rapport molaire Sn/(Sn + Ti) dans le film de couverture est de 0,05 ou plus mais inférieur à 0,5.
(JA)  透明導電性酸化物膜上にオーバーコート膜が設置された透明導電性酸化物膜付基体において、透明導電性酸化物膜と、オーバーコート膜と、の界面でオーミック接触を達成する。 基体上に、透明導電性酸化物膜、および、前記透明導電性酸化物膜の上に設置されたオーバーコート膜が、常圧CVD法により各々形成された透明導電性酸化物膜付基体であって、前記透明導電性酸化物膜において、少なくとも前記オーバーコート膜と接する部分が、フッ素を酸化スズ(SnO2)に対して、0.0001~0.09(モル比)含むフッ素ドープSnO2膜であり、前記オーバーコート膜が、酸化チタン(TiO2)を主成分とし、酸化スズを含有するものであり、該膜中のSn/(Sn+Ti)モル比が0.05以上0.5未満であることを特徴とする透明導電性酸化物膜付基体。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)