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1. (WO2012176390) SOLID-STATE IMAGING DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2012/176390 International Application No.: PCT/JP2012/003710
Publication Date: 27.12.2012 International Filing Date: 06.06.2012
IPC:
H01L 27/146 (2006.01) ,H01L 21/768 (2006.01) ,H04N 5/357 (2011.01) ,H04N 5/369 (2011.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
146
Imager structures
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
768
Applying interconnections to be used for carrying current between separate components within a device
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
5
Details of television systems
30
Transforming light or analogous information into electric information
335
using solid-state image sensors [SSIS]
357
Noise processing, e.g. detecting, correcting, reducing or removing noise
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
5
Details of television systems
30
Transforming light or analogous information into electric information
335
using solid-state image sensors [SSIS]
369
SSIS architecture; Circuitry associated therewith
Applicants:
パナソニック株式会社 PANASONIC CORPORATION [JP/JP]; 大阪府門真市大字門真1006番地 1006, Oaza Kadoma, Kadoma-shi, Osaka 5718501, JP (AllExceptUS)
坂田 祐輔 SAKATA, Yusuke; null (UsOnly)
森 三佳 MORI, Mitsuyoshi; null (UsOnly)
廣瀬 裕 HIROSE, Yutaka; null (UsOnly)
益田 洋司 MASUDA, Hiroshi; null (UsOnly)
栗山 仁志 KURIYAMA, Hitoshi; null (UsOnly)
宮川 良平 MIYAGAWA, Ryohei; null (UsOnly)
Inventors:
坂田 祐輔 SAKATA, Yusuke; null
森 三佳 MORI, Mitsuyoshi; null
廣瀬 裕 HIROSE, Yutaka; null
益田 洋司 MASUDA, Hiroshi; null
栗山 仁志 KURIYAMA, Hitoshi; null
宮川 良平 MIYAGAWA, Ryohei; null
Agent:
新居 広守 NII, Hiromori; 大阪府大阪市淀川区西中島5丁目3番10号タナカ・イトーピア新大阪ビル6階新居国際特許事務所内 c/o NII Patent Firm, 6F, Tanaka Ito Pia Shin-Osaka Bldg.,3-10, Nishi Nakajima 5-chome, Yodogawa-ku, Osaka-city, Osaka 5320011, JP
Priority Data:
2011-13994423.06.2011JP
Title (EN) SOLID-STATE IMAGING DEVICE
(FR) DISPOSITIF D'IMAGERIE À SEMI-CONDUCTEURS
(JA) 固体撮像装置
Abstract:
(EN) The solid-stage imaging device of the present invention includes a first electrode (113) formed above a semiconductor substrate (101), a photoelectric conversion film (114) formed on top of the first electrode (113) for photoelectrically converting light to a signal charge, a second electrode (115) formed on top of the photoelectric conversion film (114), a charge storage region (104) connected electrically to the first electrode (113) for storing a signal charge photoelectrically converted by the photoelectric conversion film (114), an amplifying transistor (108a) for amplifying the signal charge stored in the charge storage region (104), a reset gate electrode for resetting the charge storage region (104), and a contact plug (107) made of a semiconducting material and in direct contact with the charge storage region (104) for electrically connecting the first electrode (113) to the charge storage region (104).
(FR) La présente invention concerne un dispositif d'imagerie à semi-conducteurs, comprenant : une première électrode (113), formée au-dessus d'un substrat semi-conducteur (101) ; un film de conversion photoélectrique (114), formé sur le dessus de la première électrode (113) et servant à convertir de manière photoélectrique la lumière en une charge de signal ; une seconde électrode (115), formée sur le dessus du film de conversion photoélectrique (114) ; une région de stockage de charge (104), connectée électriquement à la première électrode (113) et servant à stocker une charge de signal convertie de manière photoélectrique par le film de conversion photoélectrique (114) ; un transistor d'amplification (108a), servant à amplifier la charge de signal stockée dans la région de stockage de charge (104) ; une électrode de grille de réinitialisation, servant à réinitialiser la région de stockage de charge (104) ; et une fiche de contact (107), constituée d'un matériau semi-conducteur et directement au contact de la région de stockage de charge (104) en vue de connecter électriquement la première électrode (113) à la région de stockage de charge (104).
(JA)  本発明に係る固体撮像装置は、半導体基板(101)の上方に形成された第1電極(113)と、第1電極(113)上に形成され、光を信号電荷に光電変換する光電変換膜(114)と、光電変換膜(114)上に形成された第2電極(115)と、第1電極(113)に電気的に接続されており、光電変換膜(114)により光電変換された信号電荷を蓄積する電荷蓄積領域(104)と、電荷蓄積領域(104)に蓄積されている信号電荷を増幅する増幅トランジスタ(108a)と、電荷蓄積領域(104)をリセットするリセットゲート電極と、第1電極(113)と電荷蓄積領域(104)とを電気的に接続するために用いられ、電荷蓄積領域(104)に直接接する、半導体材料で構成されているコンタクトプラグ(107)とを備える。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
JPWO2012176390