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1. (WO2012176364) SOLID-STATE IMAGING DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2012/176364 International Application No.: PCT/JP2012/002690
Publication Date: 27.12.2012 International Filing Date: 18.04.2012
IPC:
H04N 5/357 (2011.01) ,H01L 27/146 (2006.01) ,H04N 5/374 (2011.01)
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
5
Details of television systems
30
Transforming light or analogous information into electric information
335
using solid-state image sensors [SSIS]
357
Noise processing, e.g. detecting, correcting, reducing or removing noise
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
146
Imager structures
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
5
Details of television systems
30
Transforming light or analogous information into electric information
335
using solid-state image sensors [SSIS]
369
SSIS architecture; Circuitry associated therewith
374
Addressed sensors, e.g. MOS or CMOS sensors
Applicants:
パナソニック株式会社 PANASONIC CORPORATION [JP/JP]; 大阪府門真市大字門真1006番地 1006, Oaza Kadoma, Kadoma-shi, Osaka 5718501, JP (AllExceptUS)
彦坂 光治 HIKOSAKA, Koji; null (UsOnly)
藤中 洋 FUJINAKA, Hiroshi; null (UsOnly)
Inventors:
彦坂 光治 HIKOSAKA, Koji; null
藤中 洋 FUJINAKA, Hiroshi; null
Agent:
特許業務法人前田特許事務所 MAEDA & PARTNERS; 大阪府大阪市中央区本町2丁目5番7号 大阪丸紅ビル5階 Osaka-Marubeni Bldg.5F,5-7,Hommachi 2-chome, Chuo-ku, Osaka-shi, Osaka 5410053, JP
Priority Data:
2011-14107224.06.2011JP
Title (EN) SOLID-STATE IMAGING DEVICE
(FR) DISPOSITIF D'IMAGERIE À SEMI-CONDUCTEUR
(JA) 固体撮像装置
Abstract:
(EN) The solid-state imaging device is provided with multiple pixels arranged in a matrix and a peripheral circuit for driving the pixels. Each of the pixels has a photoelectric transducer for converting incident light into an electric charge and an amplification transistor that amplifies and outputs the electric charge to a vertical common signal line. The peripheral circuit has a row constant-current source (102) that contains load transistors (222) for supplying currents to the amplification transistors via the vertical common signal lines (134). The film thickness of the gate insulating film of each load transistors (222) is thinner than that of at least one of transistors other than the load transistors that are contained in the pixels and the peripheral circuit.
(FR) L'invention porte sur un dispositif d'imagerie à semi-conducteur qui comprend de multiples pixels agencés en une matrice et un circuit périphérique pour commander les pixels. Chacun des pixels comprend un transducteur photoélectrique pour convertir de la lumière incidente en une charge électrique et un transistor d'amplification qui amplifie et délivre la charge électrique à une ligne de signal commune verticale. Le circuit périphérique comprend une source de courant constant de rangée (102) qui contient des transistors de charge (222) pour fournir des courants aux transistors d'amplification par les lignes de signal communes verticales (134). L'épaisseur de film du film d'isolation de grille de chaque transistor de charge (222) est plus mince que celle d'au moins l'un des transistors autres que les transistors de charge qui sont contenus dans les pixels et le circuit périphérique.
(JA)  固体撮像装置は、行列状に配置された複数の画素と、画素を駆動する周辺回路とを備えている。画素は、入射光を電荷に変換する光電変換素子及び電荷を増幅して垂直共通信号線に出力する増幅トランジスタを有している。周辺回路は、垂直共通信号線134を介して増幅トランジスタに電流を供給する負荷トランジスタ222を含む列定電流源102を有している。負荷トランジスタ222は、ゲート絶縁膜の膜厚が画素及び周辺回路に含まれる負荷トランジスタ以外のトランジスタの少なくとも1つよりも薄い。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)