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1. (WO2012175902) METHOD OF MAKING A STRUCTURE COMPRISING COATING STEPS AND CORRESPONDING STRUCTURE AND DEVICES
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2012/175902 International Application No.: PCT/GB2011/051184
Publication Date: 27.12.2012 International Filing Date: 23.06.2011
IPC:
H01L 31/0236 (2006.01) ,H01L 31/0352 (2006.01) ,H01L 31/0224 (2006.01) ,H01L 31/0392 (2006.01) ,H01L 31/18 (2006.01) ,H01L 51/52 (2006.01) ,H01L 51/44 (2006.01) ,H01L 51/56 (2006.01) ,H01M 4/1395 (2010.01) ,H01M 4/78 (2006.01) ,H01M 10/04 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
0236
Special surface textures
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248
characterised by their semiconductor bodies
0352
characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
0224
Electrodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248
characterised by their semiconductor bodies
036
characterised by their crystalline structure or particular orientation of the crystalline planes
0392
including thin films deposited on metallic or insulating substrates
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50
specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
52
Details of devices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42
specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
44
Details of devices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50
specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
56
Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
M
PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
4
Electrodes
02
Electrodes composed of, or comprising, active material
13
Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
139
Processes of manufacture
1395
of electrodes based on metals, Si or alloys
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
M
PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
4
Electrodes
02
Electrodes composed of, or comprising, active material
64
Carriers or collectors
70
characterised by shape or form
78
Shapes other than plane or cylindrical, e.g. helical
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
M
PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
10
Secondary cells; Manufacture thereof
04
Construction or manufacture in general
Applicants:
BIG SOLAR LIMITED [GB/GB]; 4 Douro Terrace Sunderland SR2 7DX, GB (AllExceptUS)
TOPPING, Alexander, John; GB (UsOnly)
LANE, Peter, Drysdale; GB (UsOnly)
Inventors:
TOPPING, Alexander, John; GB
LANE, Peter, Drysdale; GB
Agent:
ATKINSON & COMPANY INTELLECTUAL PROPERTY LIMITED; G.I.B.C. Mulgrave Terrace Gateshead NE8 1AN, GB
Priority Data:
Title (EN) METHOD OF MAKING A STRUCTURE COMPRISING COATING STEPS AND CORRESPONDING STRUCTURE AND DEVICES
(FR) PROCÉDÉ DE PRODUCTION D'UNE STRUCTURE COMPRENANT DES ÉTAPES DE REVÊTEMENT ET STRUCTURE ET DISPOSITIFS CORRESPONDANTS
Abstract:
(EN) A method of producing a structure comprising a substrate (11) having at least one integral first face at a first angle relative to a normal from the substrate, at least one second integral second face at a second angle relative to a normal from the substrate; with a cavity in the structure between the first and second faces; the method comprising the steps of: coating a portion (15) of the first face with a first conducting layer; coating a portion (18) of the second face with a second conducting layer; and depositing in the cavity an active material (31) to provide ohmic and rectifying contacts for insertion or extraction of charge from the active material by way of the first and second conducting layers. The active material may be photovoltaic, light emitting or ion conducting.
(FR) L'invention concerne un procédé de production d'une structure comprenant un substrat (11) présentant au moins une première face intégrale à un premier angle par rapport à une droite normale partant du substrat, au moins une seconde face intégrale à un second angle par rapport à une droite normale partant du substrat, une cavité étant formée dans la structure entre la première et la seconde face. Le procédé selon l'invention comprend les étapes suivantes : revêtement d'une partie (15) de la première face avec une première couche conductrice ; revêtement d'une partie (18) de la seconde face avec une seconde couche conductrice ; et dépôt dans la cavité d'un matériau actif (31) pour produire des contacts ohmique et redresseur pour l'insertion ou l'extraction d'une charge du matériau actif au moyen de la première et second couche conductrice. Le matériau actif peut être photovoltaïque, électroluminescent ou conducteur d'ions.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
CA2840327EP2724380CN103843149ES2599370