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1. (WO2012175561) METHOD FOR TRANSFERRING A LAYER OF SEMICONDUCTOR, AND SUBSTRATE COMPRISING A CONFINEMENT STRUCTURE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2012/175561 International Application No.: PCT/EP2012/061848
Publication Date: 27.12.2012 International Filing Date: 20.06.2012
IPC:
H01L 21/762 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
76
Making of isolation regions between components
762
Dielectric regions
Applicants:
SOITEC [FR/FR]; Chemin des Franques F-38190 Bernin, FR (AllExceptUS)
LALLEMENT, Fabrice [FR/FR]; FR (UsOnly)
FIGUET, Christophe [FR/FR]; FR (UsOnly)
DELPRAT, Daniel [FR/FR]; FR (UsOnly)
Inventors:
LALLEMENT, Fabrice; FR
FIGUET, Christophe; FR
DELPRAT, Daniel; FR
Agent:
COLLIN, Jérôme; Cabinet REGIMBEAU 20, rue de Chazelles F-75847 Paris Cedex 17, FR
Priority Data:
115557723.06.2011FR
Title (EN) METHOD FOR TRANSFERRING A LAYER OF SEMICONDUCTOR, AND SUBSTRATE COMPRISING A CONFINEMENT STRUCTURE
(FR) PROCÉDÉ DE TRANSFERT D'UNE COUCHE DE SEMI-CONDUCTEUR ET SUBSTRAT COMPRENANT UNE STRUCTURE DE CONFINEMENT
Abstract:
(EN) The invention relates to a method for transferring a layer of semiconductor, characterized in that it comprises the steps consisting in: -providing (E1) a donor substrate (3) comprising a useful layer (2) consisting of a semiconductor material, and a confinement structure (5), comprising a confinement layer (4), consisting of a semiconductor material, the confinement layer (4)with a chemical composition different than the useful layer (2), and two protective layers (6, 7)of semiconductor material, and with a chemical composition distinct from the confinement layer (4), the protective layers being arranged on both sides of the confinement layer (4), -introducing (E3) ions (15) int he donor substrate (3), -bonding ( E4) the donor substrate (3)and a receiver substrate (10), -subjecting (E5) the donor substrate (3) and the receiver substrate (10) to heat treatment comprising an increase in temperature, during which the confinement layer (4) attracts the ions (15) in order to concentrate them in said confinement layer (4), and -detaching (S6) the donor substrate (3) from the receiver substrate (10) by breaking at said confinement layer (4).
(FR) L'invention concerne un procédé de transfert d'une couche de semi-conducteur, caractérisé en ce qu'il comprend les étapes consistant à : (E1) prendre un substrat donneur (3) comprenant une couche utile (2) constituée d'un matériau semi-conducteur et une structure de confinement (5) comprenant une couche de confinement (4) constituée d'un matériau semi-conducteur, cette couche de confinement (4) ayant une composition chimique différente de celle de la couche utile (2), et deux couches de protection (6, 7) en matériau semi-conducteur ayant une composition chimique différente de celle de la couche de confinement (4), les couches de protection étant disposées des deux côtés de la couche de confinement (4); (E3) introduire des ions (15) dans le substrat donneur (3); (E4) coller le substrat donneur (3) sur un substrat receveur (10); (E5) soumettre le substrat donneur (3) et le substrat receveur (10) à un traitement thermique comprenant une augmentation de température, au cours duquel la couche de confinement (4) attire les ions (15) pour qu'ils soient concentrés dans ladite couche de confinement (4); et (S6) séparer le substrat donneur (3) du substrat receveur (10) par rupture au niveau de la couche de confinement (4).
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
US20140183601