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1. (WO2012174949) DEEP ULTRAVIOLET SEMICONDUCTOR LIGHT EMITTING DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2012/174949 International Application No.: PCT/CN2012/075070
Publication Date: 27.12.2012 International Filing Date: 04.05.2012
IPC:
H01L 33/64 (2010.01) ,H01L 33/46 (2010.01) ,H01L 33/00 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
64
Heat extraction or cooling elements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
44
characterised by the coatings, e.g. passivation layer or anti-reflective coating
46
Reflective coating, e.g. dielectric Bragg reflector
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Applicants:
厦门市三安光电科技有限公司 XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD. [CN/CN]; 中国福建省厦门市 吕岭路1721-1725号 No. 1721-1725, Lvling Road Xiamen, Fujian 361009, CN (AllExceptUS)
陈文欣 CHEN, Wenxin [CN/CN]; CN (UsOnly)
钟志白 ZHONG, Zhibai [CN/CN]; CN (UsOnly)
梁兆煊 LIANG, Zhaoxuan [US/CN]; CN (UsOnly)
Inventors:
陈文欣 CHEN, Wenxin; CN
钟志白 ZHONG, Zhibai; CN
梁兆煊 LIANG, Zhaoxuan; CN
Agent:
北京集佳知识产权代理有限公司 UNITALEN ATTORNEYS AT LAW; 中国北京市 朝阳区建国门外大街22号赛特广场7层 7th Floor, Scitech Place No.22, Jian Guo Men Wai Ave., Chao Yang District Beijing 100004, CN
Priority Data:
201110165297.320.06.2011CN
Title (EN) DEEP ULTRAVIOLET SEMICONDUCTOR LIGHT EMITTING DEVICE
(FR) DISPOSITIF SEMI-CONDUCTEUR D'ÉMISSION DE LUMIÈRE EN ULTRAVIOLET PROFOND
(ZH) 一种深紫外半导体发光器件
Abstract:
(EN) Disclosed is a deep ultraviolet semiconductor light emitting device, comprising a heat dissipation substrate having an electrically conductive channel; a light emitting epitaxial structure, formed of an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer in sequence, and having two main surfaces being a light output surface on one side and a non light output surface on the other side; a semiconductor covering layer having a dim light channel and formed at the non light output surface side of the light emitting epitaxial structure. A reflective layer is formed on the semiconductor covering layer. The substrate is connected to the reflective layer. In the present invention, the light emitting epitaxial structure is connected to the heat dissipation substrate having the electrically conductive channel, thereby effectively solving the heat dissipation problem thereof. The covering layer, away from the light output surface side, of the light emitting epitaxial structure has the dim light channel, and in conjunction with the reflective layer, most of the light produced by the light emitter is output through the optical mechanical support structure side, so as to prevent the covering layer p-GaN from absorbing the ultraviolet light, thereby increasing the light output efficiency.
(FR) L'invention concerne un dispositif semi-conducteur d'émission de lumière en ultraviolet profond, comprenant un substrat à dissipation de chaleur ayant un canal électroconducteur; une structure épitaxiale d'émission de lumière, formée d'une couche semi-conductrice de type n, une couche d'émission de lumière, d'une couche semi-conductrice de type n, en séquence, et ayant deux surfaces principales, qui sont une surface de sortie de lumière d'un côté et une surface non sortie de lumière de l'autre côté; une couche de recouvrement semi-conductrice ayant un canal de lumière faible et formée au côté surface non sortie de lumière de la structure épitaxiale d'émission de lumière. Une couche réfléchissante est formée sur la couche de recouvrement semi-conductrice. Le substrat est relié à la couche réfléchissante. Selon la présente invention, la structure épitaxiale d'émission de lumière est reliée au substrat à dissipation de chaleur ayant le canal électroconducteur, résolvant ainsi de façon efficace le problème de dissipation de chaleur de celui-ci. La couche de recouvrement, éloignée du côté surface de sortie de lumière, de la structure épitaxiale d'émission de lumière qui a le canal de faible lumière et, conjointement avec la couche réfléchissante, la plupart de la lumière produite par l'émetteur de lumière est délivrée en sortie par le côté structure support mécanique optique, de façon à empêcher le p-GaN de la couche de recouvremant d'absorber la lumière ultraviolette, augmentant ainsi l'efficacité de sortie de lumière.
(ZH) 本发明公开了一种深紫外半导体发光器件,它包括一带有导电通道的散热基板;一发光外延结构,依次由n型半导体层、发光层、p型半导体层构成,其有两个主表面,一侧为出光面,另一侧为非出光面;一带有微光通道的半导体覆盖层,形成在发光外延结构的非出光面一侧;一反射层形成在半导体覆盖层上;基板与反射层连接。本发明将发光外延结构连结到带导电通道的散热基板上,有效的解决其散热问题,发光外延结构的远离出光面的一侧覆盖层带有微光通道,加上反射层,发光体产生的光大部分从光学机械支持结构的一侧输出,避免了覆盖层p-GaN吸收紫外线,有效地提高了出光效率。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)