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1. (WO2012174410) IMPROVED HETEROEPITAXIAL GROWTH USING ION IMPLANTATION
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2012/174410 International Application No.: PCT/US2012/042720
Publication Date: 20.12.2012 International Filing Date: 15.06.2012
IPC:
C30B 29/40 (2006.01) ,C30B 23/02 (2006.01) ,C30B 25/18 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10
Inorganic compounds or compositions
40
AIIIBV compounds
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
23
Single-crystal growth by condensing evaporated or sublimed materials
02
Epitaxial-layer growth
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02
Epitaxial-layer growth
18
characterised by the substrate
Applicants:
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. [US/US]; 35 Dory Road Gloucester, MA 01930, US (AllExceptUS)
EVANS, Morgan D. [US/US]; US (UsOnly)
CHEN, Chi-Chun; US (UsOnly)
KUO, Cheng, Huang; CN (UsOnly)
Inventors:
EVANS, Morgan D.; US
CHEN, Chi-Chun; US
KUO, Cheng, Huang; CN
Agent:
LUCEK, Nathaniel; Varian Semiconductor Equipment Associates, Inc. 35 Dory Road Gloucester, MA 01930, US
Priority Data:
13/517,53513.06.2012US
61/497,74416.06.2011US
Title (EN) IMPROVED HETEROEPITAXIAL GROWTH USING ION IMPLANTATION
(FR) CROISSANCE HÉTÉROÉPITAXIALE AMÉLIORÉE À L'AIDE D'UNE IMPLANTATION IONIQUE
Abstract:
(EN) In one embodiment, a method of growing a heteroepitaxial layer comprises providing a patterned substrate containing patterned features having sidewalls. The method also includes directing ions toward the sidewalls in an exposure, wherein altered sidewall regions are formed, and depositing the heteroepitaxial layer under a set of deposition conditions effective to preferentially promote epitaxial growth on the sidewalls in comparison to other surfaces of the patterned features.
(FR) La présente invention se rapporte, dans un mode de réalisation, à un procédé de croissance d'une couche hétéroépitaxiale qui consiste à utiliser un substrat à motifs qui contient des caractéristiques à motifs qui présentent des parois latérales. Le procédé consiste également à diriger des ions vers les parois latérales lors d'une exposition au cours de laquelle sont formées les parties de paroi latérale modifiées, et à déposer la couche hétéroépitaxiale selon un ensemble de conditions de dépôt efficaces pour favoriser de façon préférentielle une croissance épitaxiale sur les parois latérales par comparaison à d'autres surfaces des caractéristiques à motifs.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)