Search International and National Patent Collections
Some content of this application is unavailable at the moment.
If this situation persists, please contact us atFeedback&Contact
1. (WO2012173778) BOOSTER FILMS FOR SOLAR PHOTOVOLTAIC SYSTEMS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2012/173778 International Application No.: PCT/US2012/040066
Publication Date: 20.12.2012 International Filing Date: 31.05.2012
IPC:
H01L 31/073 (2012.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
06
characterised by at least one potential-jump barrier or surface barrier
072
the potential barriers being only of the PN heterojunction type
073
comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
Applicants:
3M INNOVATIVE PROPERTIES COMPANY [US/US]; 3M Center Post Office Box 33427 Saint Paul, Minnesota 55133-3427, US (AllExceptUS)
HAASE, Michael A. [US/US]; US (UsOnly)
Inventors:
HAASE, Michael A.; US
Agent:
STORVICK, Kristofor L.; 3M Center Office of Intellectual Property Counsel Post Office Box 33427 Saint Paul, Minnesota 55133-3427, US
Priority Data:
61/497,68816.06.2011US
Title (EN) BOOSTER FILMS FOR SOLAR PHOTOVOLTAIC SYSTEMS
(FR) FILMS DE STIMULATION POUR SYSTÈMES PHOTOVOLTAÏQUES SOLAIRES
Abstract:
(EN) We describe stacked photovoltaic modules, and components thereof, in which at least one booster cell is combined with at least one primary cell in a stacked configuration. The booster cell may be in the form of a polycrystalline film disposed on a transparent substrate, such as a glass substrate, and the film may be patterned to form multiple booster cells. The booster cell includes an n-type layer and a p-type layer; the n-type layer may include polycrystalline zinc sulfide (ZnS), and the p-type layer may include polycrystalline zinc telluride (ZnTe). The n-type layer may have a band gap energy of at least 3.5 eV, and the p-type layer may have a band gap energy of at least 2 or at least 2.2 eV, or in a range from 2.2 to 2.3 eV. An intrinsic layer, also comprising polycrystalline ZnTe, may reside between the n-type and p-type layers.
(FR) L'invention concerne des modules photovoltaïques empilés et leurs composants, dans lesquels au moins une cellule de stimulation est combinée avec au moins une cellule principale dans une configuration empilée. La cellule de stimulation peut se présenter sous la forme d'un film polycristallin disposé sur un substrat transparent, tel qu'un substrat de verre, et le film peut être à motifs pour former plusieurs cellules de stimulation. La cellule de stimulation comprend une couche de type n et une couche de type p; la couche de type n peut comprendre du sulfure de zinc polycristallin (ZnS), et la couche de type p peut comprendre du tellurure de zinc polycristallin (ZnTe). La couche de type n peut avoir une énergie de bande interdite d'au moins 3,5 eV, et la couche de type peut avoir une énergie de bande interdite d'au moins 2 ou d'au moins 2,2 eV, ou se situant dans une plage de 2,2 à 2,3 eV. Une couche intrinsèque, comprenant également ZnTe poly-cristallin, peut résider entre les couches de type n et de type p.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
CN103608931EP2721644US20140202515JP2014519718