Search International and National Patent Collections
Some content of this application is unavailable at the moment.
If this situation persists, please contact us atFeedback&Contact
1. (WO2012172955) SILICON CARBIDE SUBSTRATE AND METHOD FOR MANUFACTURING SAME
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2012/172955 International Application No.: PCT/JP2012/063477
Publication Date: 20.12.2012 International Filing Date: 25.05.2012
IPC:
C30B 33/06 (2006.01) ,C30B 29/36 (2006.01) ,H01L 29/12 (2006.01) ,H01L 29/78 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
33
After-treatment of single crystals or homogeneous polycrystalline material with defined structure
06
Joining of crystals
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10
Inorganic compounds or compositions
36
Carbides
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
12
characterised by the materials of which they are formed
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
Applicants:
住友電気工業株式会社 SUMITOMO ELECTRIC INDUSTRIES, LTD. [JP/JP]; 大阪府大阪市中央区北浜四丁目5番33号 5-33, Kitahama 4-chome, Chuo-ku, Osaka-shi, Osaka 5410041, JP (AllExceptUS)
堀 勉 HORI, Tsutomu [JP/JP]; JP (UsOnly)
原田 真 HARADA, Shin [JP/JP]; JP (UsOnly)
石橋 恵二 ISHIBASHI, Keiji [JP/JP]; JP (UsOnly)
藤原 伸介 FUJIWARA, Shinsuke [JP/JP]; JP (UsOnly)
Inventors:
堀 勉 HORI, Tsutomu; JP
原田 真 HARADA, Shin; JP
石橋 恵二 ISHIBASHI, Keiji; JP
藤原 伸介 FUJIWARA, Shinsuke; JP
Agent:
特許業務法人深見特許事務所 FUKAMI PATENT OFFICE, p.c.; 大阪府大阪市北区中之島二丁目2番7号 中之島セントラルタワー Nakanoshima Central Tower 2-7, Nakanoshima 2-chome Kita-ku, Osaka-shi Osaka 5300005, JP
Priority Data:
2011-13405016.06.2011JP
2011-20867526.09.2011JP
Title (EN) SILICON CARBIDE SUBSTRATE AND METHOD FOR MANUFACTURING SAME
(FR) SUBSTRAT EN CARBURE DE SILICIUM ET SON PROCÉDÉ DE FABRICATION
(JA) 炭化珪素基板およびその製造方法
Abstract:
(EN) A first single crystal board (11) has a first side surface (S1), and is composed of a silicon carbide. A second single crystal board (12) has a second side surface (S2) facing the first side surface (S1), and is composed of the silicon carbide. Between the first and the second side surfaces (S1, S2), a connecting portion (BDa) connects the first and the second side surfaces (S1, S2) to each other. At least a part of the connecting portion (BDa) is formed of particles, which are composed of a silicon carbide, and have a maximum length of 1 μm or less.
(FR) Selon l'invention, un premier panneau monocristallin (11) comprend une première surface latérale (S1) et est composé d'un carbure de silicium. Un second panneau monocristallin (12) comprend une seconde surface latérale (S2) en regard de la première surface latérale (S1) et est composé du carbure de silicium. Entre les première et seconde surfaces latérales (S1, S2), une partie de liaison (BDa) relie les première et seconde surfaces latérales (S1, S2) l'une à l'autre. Au moins une partie de la partie de liaison (BDa) est constituée de particules, qui sont composées d'un carbure de silicium et qui ont une longueur maximale inférieure ou égale à 1 µm.
(JA)  第1の単結晶板(11)は、第1の側面(S1)を有し、炭化珪素からなる。第2の単結晶板(12)は、第1の側面(S1)と対向する第2の側面(S2)を有し、炭化珪素からなる。接合部(BDa)は、第1および第2の側面(S1、S2)の間で第1および第2の側面(S1、S2)を互いにつないでいる。接合部(BDa)の少なくとも一部は、炭化珪素から作られた1μm以下の最大長さを有する粒子から作られている。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)