Search International and National Patent Collections
Some content of this application is unavailable at the moment.
If this situation persists, please contact us atFeedback&Contact
1. (WO2012169462) PHOTODIODE, METHOD FOR MANUFACTURING SAME, PHOTODIODE ARRAY, SPECTROPHOTOMETER, AND DEVICE FOR IMAGING SOLIDS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2012/169462 International Application No.: PCT/JP2012/064394
Publication Date: 13.12.2012 International Filing Date: 04.06.2012
IPC:
H01L 31/10 (2006.01) ,G01J 3/36 (2006.01) ,H01L 27/146 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
G PHYSICS
01
MEASURING; TESTING
J
MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
3
Spectrometry; Spectrophotometry; Monochromators; Measuring colours
28
Investigating the spectrum
30
Measuring the intensity of spectral lines directly on the spectrum itself
36
Investigating two or more bands of a spectrum by separate detectors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
146
Imager structures
Applicants:
国立大学法人東北大学 TOHOKU UNIVERSITY [JP/JP]; 宮城県仙台市青葉区片平二丁目1番1号 1-1, Katahira 2-chome, Aoba-ku, Sendai-shi, Miyagi 9808577, JP (AllExceptUS)
株式会社島津製作所 Shimadzu Corporation [JP/JP]; 京都府京都市中京区西ノ京桑原町1番地 1, Nishinokyo-Kuwabara-cho, Nakagyo-ku, Kyoto-shi, Kyoto 6048511, JP (AllExceptUS)
須川 成利 SUGAWA, Shigetoshi [JP/JP]; JP (UsOnly)
黒田 理人 KURODA, Rihito [JP/JP]; JP (UsOnly)
Inventors:
須川 成利 SUGAWA, Shigetoshi; JP
黒田 理人 KURODA, Rihito; JP
Agent:
特許業務法人京都国際特許事務所 Kyoto International Patent Law Office; 京都府京都市下京区東洞院通四条下ル元悪王子町37番地 豊元四条烏丸ビル Hougen-Sizyokarasuma Building, 37, Motoakuozi-tyo, Higasinotouin Sizyo-sagaru, Simogyo-ku, Kyoto-si, Kyoto 6008091, JP
Priority Data:
2011-12727307.06.2011JP
Title (EN) PHOTODIODE, METHOD FOR MANUFACTURING SAME, PHOTODIODE ARRAY, SPECTROPHOTOMETER, AND DEVICE FOR IMAGING SOLIDS
(FR) PHOTODIODE, PROCÉDÉ POUR SA FABRICATION, GROUPEMENT DE PHOTODIODES, SPECTROPHOTOMÈTRE ET DISPOSITIF POUR RÉALISER DES IMAGES DE SOLIDES
(JA) フォトダイオード及びその製造方法、フォトダイオードアレイ、分光光度計、並びに固体撮像装置
Abstract:
(EN) A photodiode provided with a high-concentration layer on the surface thereof, the high-concentration layer being formed so that the thickness of an un-depleted region is greater than that of irregularities in the interface between silicon and an insulating film layer, and less than the penetration depth of ultraviolet light.
(FR) L'invention porte sur une photodiode, qui comporte une couche de concentration élevée sur la surface de celle-ci, la couche de concentration élevée étant formée de telle sorte que l'épaisseur d'une région non appauvrie est supérieure à celle d'irrégularités dans l'interface entre du silicium et une couche de film isolant, et inférieure à la profondeur de pénétration de la lumière ultraviolette.
(JA)  表面に高濃度層を備えたフォトダイオードにおいて、高濃度層は、空乏化されない領域の厚さをシリコンと絶縁膜層との界面の凹凸より厚く、且つ、紫外光の侵入長より薄くなるように形成されている。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
EP2720281US20140097510JPWO2012169462JP2015122527US20160076939EP3182454