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1. (WO2012166745) THICK CUBIC BORON NITRIDE (CBN) LAYER AND MANUFACTURING PROCESS THEREFOR
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2012/166745 International Application No.: PCT/US2012/039892
Publication Date: 06.12.2012 International Filing Date: 29.05.2012
IPC:
H01L 21/302 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
Applicants:
NANOMECH INC. [US/US]; 534 W. Research Center Blvd. Fayettville, AR 72701, US (AllExceptUS)
JIANG, Wenping [US/US]; US (UsOnly)
MALSHE, Ajay, P. [US/US]; US (UsOnly)
Inventors:
JIANG, Wenping; US
MALSHE, Ajay, P.; US
Agent:
DOUGHERTY, J. Charles; Wright, Lindsey & Jennings LLP 200 W. Capitol Ave., Suite 2300 Little Rock, AR 72201, US
Priority Data:
61/490,71927.05.2011US
61/490,73027.05.2011US
Title (EN) THICK CUBIC BORON NITRIDE (CBN) LAYER AND MANUFACTURING PROCESS THEREFOR
(FR) COUCHE ÉPAISSE DE NITRURE DE BORE CUBIQUE (CBN) ET SON PROCÉDÉ DE FABRICATION
Abstract:
(EN) A method for forming a stand-alone wafer or a coating on a substrate uses a composite of cubic boron nitride (cBN) particles and other materials, such as nitrides, carbides, carbonitrides, borides, oxides, and metallic phase materials. The wafer or coating may be formed of a thickness up to about 1000 microns for improved wear life. The density of material within the wafer or coating may be varied according to desired parameters, and a gradient of particle sizes for the cBN may be presented across the thickness of the material.
(FR) L'invention porte sur un procédé qui permet de former une tranche autoporteuse ou un revêtement sur un substrat et qui utilise un composite de particules de nitrure de bore cubique (cBN) et d'autres matériaux, tels que des nitrures, des carbures, des carbonitrures, des borures, des oxydes et des matériaux en phase métallique. La tranche ou le revêtement peut être formé à une épaisseur d'environ 1000 micromètres afin d'obtenir une durée de vie à l'usure améliorée. La densité du matériau dans la tranche ou dans le revêtement peut être amenée à varier en fonction de paramètres voulus et un gradient de tailles des particules pour le cBN peut être formé sur l'épaisseur du matériau.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP2715784US20140215925JP2014519467