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1. (WO2012164857) PLASMA TREATMENT DEVICE, CONVEYANCE CARRIER, AND PLASMA TREATMENT METHOD
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2012/164857 International Application No.: PCT/JP2012/003278
Publication Date: 06.12.2012 International Filing Date: 18.05.2012
IPC:
H01L 21/3065 (2006.01) ,H01L 21/683 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
3065
Plasma etching; Reactive-ion etching
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683
for supporting or gripping
Applicants:
パナソニック株式会社 PANASONIC CORPORATION [JP/JP]; 大阪府門真市大字門真1006番地 1006, Oaza Kadoma, Kadoma-shi, Osaka 5718501, JP (AllExceptUS)
針貝 篤史 HARIKAI, Atsushi; null (UsOnly)
西崎 展弘 NISHIZAKI, Nobuhiro; null (UsOnly)
Inventors:
針貝 篤史 HARIKAI, Atsushi; null
西崎 展弘 NISHIZAKI, Nobuhiro; null
Agent:
鮫島 睦 SAMEJIMA, Mutsumi; 大阪府大阪市中央区城見1丁目3番7号IMPビル青山特許事務所 AOYAMA & PARTNERS, IMP Building, 3-7, Shiromi 1-chome, Chuo-ku, Osaka-shi, Osaka 5400001, JP
Priority Data:
2011-12045230.05.2011JP
Title (EN) PLASMA TREATMENT DEVICE, CONVEYANCE CARRIER, AND PLASMA TREATMENT METHOD
(FR) DISPOSITIF DE TRAITEMENT PAR PLASMA, SYSTÈME DE TRANSPORT ET PROCÉDÉ DE TRAITEMENT PAR PLASMA
(JA) プラズマ処理装置、搬送キャリア、及びプラズマ処理方法
Abstract:
(EN) A plasma treatment for treating a substrate held on a holding sheet, in which radiation of heat to the substrate from a cover covering the holding sheet is effectively minimized. The conveyance carrier (5) has a holding sheet (6) for holding a wafer (2), and a frame (7). A protrusion (34) is provided to the lower surface (32b) of the body (32) of the cover (31) covering the holding sheet (6) and the frame (7). The protrusion (34) passes through an opening (8) provided to the holding sheet (6), and a tip (34a) comes into contact with the upper end surface (21) of an electrode section (21). A stage section (16) including the electrode section (21) is cooled in a cooling device (24).
(FR) La présente invention concerne un traitement par plasma permettant de traiter un substrat reposant sur une feuille de support, un rayonnement thermique vers le substrat depuis un couvercle recouvrant la feuille de support étant efficacement diminué. Le système de transport (5) comporte une feuille de support (6) permettant de tenir une plaquette (2), et un cadre (7). Une saillie (34) est formée dans la surface inférieure (32b) du corps (32) du couvercle (31) recouvrant la feuille de support (6) et le cadre (7). La saillie (34) passe par une ouverture (8) pratiquée dans la feuille de support (6), et une pointe (34a) vient en contact avec la surface d'extrémité supérieure (21) d'une section électrode (21). Une section étage (16) comprenant la section électrode (21) est refroidie dans un dispositif de refroidissement (24).
(JA)  保持シートに保持された基板を対象とするプラズマ処理において、保持シートを覆うカバーから基板への輻射熱を効果的に抑制する。搬送キャリア5は、ウエハ2を保持する保持シート6とフレーム7とを有する。保持シート6とフレーム7を覆うカバー31の本体32の下面32bには突出部34が設けられている。突出部34は保持シート6に設けられた開口部8を貫通し、先端34aが電極部21の上端面21aに接触する。電極部21を含むステージ部16は冷却装置24で冷却される。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)