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1. (WO2012164809) SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREFOR
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2012/164809 International Application No.: PCT/JP2012/002547
Publication Date: 06.12.2012 International Filing Date: 12.04.2012
IPC:
H01L 27/146 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
146
Imager structures
Applicants:
パナソニック株式会社 PANASONIC CORPORATION [JP/JP]; 大阪府門真市大字門真1006番地 1006, Oaza Kadoma, Kadoma-shi, Osaka 5718501, JP (AllExceptUS)
沖野 徹 OKINO, Toru; null (UsOnly)
森 三佳 MORI, Mitsuyoshi; null (UsOnly)
廣瀬 裕 HIROSE, Yutaka; null (UsOnly)
加藤 剛久 KATO, Yoshihisa; null (UsOnly)
田中 毅 TANAKA, Tsuyoshi; null (UsOnly)
Inventors:
沖野 徹 OKINO, Toru; null
森 三佳 MORI, Mitsuyoshi; null
廣瀬 裕 HIROSE, Yutaka; null
加藤 剛久 KATO, Yoshihisa; null
田中 毅 TANAKA, Tsuyoshi; null
Agent:
特許業務法人前田特許事務所 MAEDA & PARTNERS; 大阪府大阪市中央区本町2丁目5番7号 大阪丸紅ビル5階 Osaka-Marubeni Bldg.5F, 5-7,Hommachi 2-chome, Chuo-ku, Osaka-shi, Osaka 5410053, JP
Priority Data:
2011-12157531.05.2011JP
Title (EN) SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREFOR
(FR) DISPOSITIF D'IMAGERIE À SEMI-CONDUCTEURS ET SON PROCÉDÉ DE FABRICATION
(JA) 固体撮像装置及びその製造方法
Abstract:
(EN) A solid-state imaging device comprises a substrate (30), an insulating layer (31) formed on top of the substrate (30), a semiconducting layer (32) formed on top of the insulating layer (31), and a silicon layer (33) formed on top of the semiconducting layer (32). The silicon layer (33) has a plurality of pixel units each including a photoelectric conversion unit (34) converting light to a signal charge and a circuit reading the signal charge, and the refractive index of the insulating layer (31) is lower than the refractive index of the semiconducting layer (32).
(FR) La présente invention concerne un dispositif d'imagerie à semi-conducteurs qui comprend un substrat (30), une couche isolante (31) formée sur le substrat (30), une couche semi-conductrice (32) formée sur la couche isolante (31) et une couche de silicium (33) formée sur la couche semi-conductrice (32). La couche de silicium (33) possède une pluralité d'unités de pixels comprenant chacune une unité de conversion photoélectrique (34) convertissant la lumière en une charge de signal et un circuit lisant la charge du signal, et l'indice de réfraction de la couche isolante (31) est inférieur à l'indice de réfraction de la couche semi-conductrice (32).
(JA)  固体撮像装置は、基板(30)と、基板(30)の上に形成された絶縁体層(31)と、絶縁体層(31)の上に形成された半導体層(32)と、半導体層(32)の上に形成されたシリコン層(33)とを備えている。シリコン層(33)は、それぞれが、光を信号電荷に変換する光電変換部(34)と、信号電荷を読み出す回路とを含む複数の画素部を有し、絶縁体層(31)の屈折率は、半導体層(32)の屈折率よりも小さい。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
JPWO2012164809