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1. (WO2012164753) METHOD FOR PRODUCING FERROELECTRIC FILMS, FERROELECTRIC FILM AND PIEZOELECTRIC DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2012/164753 International Application No.: PCT/JP2011/062877
Publication Date: 06.12.2012 International Filing Date: 31.05.2011
IPC:
H01L 41/187 (2006.01) ,H01L 41/22 (2013.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
16
Selection of materials
18
for piezo-electric or electrostrictive elements
187
Ceramic compositions
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
22
Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
Applicants:
株式会社ユーテック YOUTEC CO., LTD. [JP/JP]; 千葉県流山市西平井956番地の1 956-1, Nishi-hirai, Nagareyama-shi, Chiba 2700156, JP (AllExceptUS)
木島 健 KIJIMA, Takeshi [JP/JP]; JP (UsOnly)
本多 祐二 HONDA, Yuuji [JP/JP]; JP (UsOnly)
茂内 健和 SHIGENAI, Takekazu [JP/JP]; JP (UsOnly)
Inventors:
木島 健 KIJIMA, Takeshi; JP
本多 祐二 HONDA, Yuuji; JP
茂内 健和 SHIGENAI, Takekazu; JP
Agent:
柳瀬 睦肇 YANASE, Mutsuyasu; 東京都新宿区高田馬場1丁目32番14号 UKビル8階 進歩国際特許事務所 PATENT ATTORNEYS SHINPO, 8th Floor, UK Building, 1-32-14, Takadanobaba, Shinjuku-ku, Tokyo 1690075, JP
Priority Data:
Title (EN) METHOD FOR PRODUCING FERROELECTRIC FILMS, FERROELECTRIC FILM AND PIEZOELECTRIC DEVICE
(FR) FILM FERROÉLECTRIQUE AINSI QUE PROCÉDÉ DE FABRICATION DE CELUI-CI, ET ÉLÉMENT PIÉZO-ÉLECTRIQUE
(JA) 強誘電体膜の製造方法、強誘電体膜及び圧電素子
Abstract:
(EN) The invention addresses the problem of obtaining wide hysteresis loops and large piezoelectric properties even when the ferroelectric film is thin. One embodiment of the invention is a method for producing a ferroelectric film (2) characterized in that metal elements in a Ni1-aWa film are thermally diffused in a PZT material film by coating the PZT material film on the Ni1-aWa film and heat-treating in an oxygen atmosphere, and a crystallized PZT film is formed by crystallizing the PZT material film. a satisfies formula (1). 1 ≥ a > 0 … (1)
(FR) L'invention a pour objectif d'obtenir une courbe d'hystérésis importante et des caractéristiques piézo-électriques élevées, y compris lorsque le film ferroélectrique de l'invention est épais. Plus précisément, selon un mode de réalisation, l'invention concerne le procédé de fabrication du film ferroélectrique (2) qui est caractéristique en ce qu'un film de cristallisation PZT est formé par application d'un film de matériau PZT sur un film de Ni1-aWa, par soumission à une diffusion de chaleur d'éléments métaux contenus dans ledit film de Ni1-aWa sur le film de matériau PZT, en effectuant un traitement thermique sous atmosphère d'oxygène, et par cristallisation du film de matériau PZT. a satisfait la formule (1) suivante : 1≧a>0…(1)
(JA)  強誘電体膜の膜厚が薄くてもヒステリシス曲線が太くて高い圧電特性を得ることを課題とする。本発明の一態様は、Ni1-a膜上にPZT材料膜を塗布し、酸素雰囲気で熱処理を行うことにより、前記Ni1-a膜中の金属元素をPZT材料膜に熱拡散させ、且つPZT材料膜を結晶化することで、PZT結晶化膜を形成することを特徴とする強誘電体膜2の製造方法である。ただし、aは、下記式(1)を満たすものである。 1≧a>0 ・・・(1)
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
JPWO2012164753