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1. (WO2012164636) SILICONE COMPOSITION FOR SEALING SEMICONDUCTOR
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2012/164636 International Application No.: PCT/JP2011/006287
Publication Date: 06.12.2012 International Filing Date: 10.11.2011
IPC:
C08L 83/05 (2006.01) ,C08L 83/07 (2006.01) ,H01L 33/56 (2010.01)
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
L
COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
83
Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Compositions of derivatives of such polymers
04
Polysiloxanes
05
containing silicon bound to hydrogen
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
L
COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
83
Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Compositions of derivatives of such polymers
04
Polysiloxanes
07
containing silicon bound to unsaturated aliphatic groups
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
52
Encapsulations
56
Materials, e.g. epoxy or silicone resin
Applicants:
モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 MOMENTIVE PERFORMANCE MATERIALS JAPAN LLC [JP/JP]; 東京都港区赤坂五丁目2番20号 5-2-20, Akasaka, Minato-ku, Tokyo 1076112, JP (AllExceptUS)
望月 紀久夫 MOCHIZUKI, Kikuo [JP/JP]; JP (UsOnly)
高木 明 TAKAGI, Akira [JP/JP]; JP (UsOnly)
Inventors:
望月 紀久夫 MOCHIZUKI, Kikuo; JP
高木 明 TAKAGI, Akira; JP
Agent:
特許業務法人サクラ国際特許事務所 SAKURA PATENT OFFICE, p.c.; 東京都千代田区神田多町二丁目1番地 神田東山ビル Kanda Higashiyama Bldg., 1, Kandata-cho 2-chome, Chiyoda-ku, Tokyo 1010046, JP
Priority Data:
PCT/JP2011/00305331.05.2011JP
Title (EN) SILICONE COMPOSITION FOR SEALING SEMICONDUCTOR
(FR) COMPOSITION DE SILICONE POUR SCELLER UN SEMI-CONDUCTEUR
(JA) 半導体封止用シリコーン組成物
Abstract:
(EN) A silicone composition for sealing a semiconductor, characterized by comprising: (A) 100 parts by weight of a polyorganosiloxane having one or more alkenyl groups, on average, per molecule, said polyorganosiloxane being obtained by reacting 60-99 parts by weight of an organosiloxane (a1), which at least contains a trifunctional siloxane unit represented by the formula R1SiO3/2 (wherein R1 represents an alkyl group or an aryl group) and does not participate in a hydrosilyl reaction, with 40-1 parts by weight of an organosiloxane (a2) which contains an alkenyl group-containing functional siloxane unit and/or a monofunctional siloxane unit; (B) a polyorganohydrogen siloxane, which has two or more hydrogen atoms bonded to a silicon atom per molecule and has a viscosity at 25oC of 1-1000 mPa∙s, in such an amount as to give 0.5-3.0 mol of hydrogen atoms per mol of the alkenyl group in component (A); and (C) a platinum-based catalyst, and a cured product of said silicone composition showing a decrease in storage modulus of 40% or greater when temperature rises from 25oC to 50oC. The silicone composition forms a cured product having an appropriate modulus and enables a large decrease in the modulus of the cured product upon heating.
(FR) Composition de silicone pour sceller un semi-conducteur, caractérisée en ce qu'elle comprend : (A) 100 parties en poids d'un polyorganosiloxane ayant un ou plusieurs groupes alcényle, en moyenne, par molécule, ledit polyorganosiloxane étant obtenu par réaction de 60-99 parties en poids d'un organosiloxane (a1), qui contient au moins un motif siloxane trifonctionnel représenté par la formule R1SiO3/2 (dans laquelle R1 représente un groupe alkyle ou un groupe aryle) et ne participe pas à une réaction d'hydrosilylation, avec 40-1 parties en poids d'un organosiloxane (a2) qui contient un motif siloxane fonctionnel contenant un groupe alcényle et/ou un motif siloxane monofonctionnel; (B) un siloxane polyorganohydrogéné, qui a deux atomes d'hydrogène ou plus liés à un atome de silicium par molécule et une viscosité à 25oC de 1-1000 mPa∙s, en une quantité apte à donner 0,5-3,0 mol d'atomes d'hydrogène par mol de groupe alcényle dans le composant (A); et (C) un catalyseur à base de platine. Cette invention concerne également un produit durci à base de ladite composition de silicone manifestant une diminution du module de stockage de 40 % ou plus quand la température monte de 25 à 50oC. La composition de silicone donne un produit durci ayant un module approprié et permet une importante diminution du module du produit durci lors du chauffage.
(JA)  この半導体封止用シリコーン組成物は、(A)(a1)少なくとも式:RSiO3/2(式中、Rはアルキル基またはアリール基を示す。)で表される3官能型シロキサン単位を含む、ヒドロシリル化反応に関与しないオルガノシロキサン60~99重量部と、(a2)アルケニル基を有する官能型シロキサン単位および/または1官能型シロキサン単位を含むオルガノシロキサン40~1重量部を反応させて得られる、1分子中に平均1個以上のアルケニル基を有するポリオルガノシロキサン100重量部と、(B)1分子中にケイ素原子に結合した水素原子を2個以上有し、25℃における粘度が1~1000mPa・sであるポリオルガノハイドロジェンシロキサンを、(A)成分のアルケニル基1モルに対して水素原子が0.5~3.0モルとなる量と、(C)白金系触媒を含有し、硬化物の貯蔵弾性率が25℃から50℃で40%以上低下することを特徴とする。適度な弾性率を有する硬化物を形成し、かつ加熱による硬化物の弾性率の大幅低下が可能である。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
US20140088232CN103562321EP2716717JPWO2012164636KR1020140052990RU2013158135