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1. (WO2012156585) MICROMECHANICAL DEVICE AND METHOD OF DESIGNING THEREOF
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2012/156585 International Application No.: PCT/FI2012/050456
Publication Date: 22.11.2012 International Filing Date: 11.05.2012
IPC:
H03H 9/02 (2006.01) ,H03H 9/24 (2006.01) ,B81B 3/00 (2006.01)
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
H
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9
Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
02
Details
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
H
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9
Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
24
Constructional features of resonators of material which is not piezo-electric, electrostrictive, or magnetostrictive
B PERFORMING OPERATIONS; TRANSPORTING
81
MICRO-STRUCTURAL TECHNOLOGY
B
MICRO-STRUCTURAL DEVICES OR SYSTEMS, e.g. MICRO-MECHANICAL DEVICES
3
Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
Applicants:
TEKNOLOGIAN TUTKIMUSKESKUS VTT [FI/FI]; Vuorimiehentie 3 FI-02044 Vtt, FI (AllExceptUS)
PRUNNILA, Mika [FI/FI]; FI (UsOnly)
JAAKKOLA, Antti [FI/FI]; FI (UsOnly)
PENSALA, Tuomas [FI/FI]; FI (UsOnly)
Inventors:
PRUNNILA, Mika; FI
JAAKKOLA, Antti; FI
PENSALA, Tuomas; FI
Agent:
SEPPO LAINE OY; Itämerenkatu 3 B FI-00180 Helsinki, FI
Priority Data:
2011546513.05.2011FI
61/485,64613.05.2011US
Title (EN) MICROMECHANICAL DEVICE AND METHOD OF DESIGNING THEREOF
(FR) DISPOSITIF MICROMÉCANIQUE ET PROCÉDÉ DE CONCEPTION DUDIT DISPOSITIF
Abstract:
(EN) The invention relates to a micromechanical device comprising a semiconductor element capable of deflecting or resonating and comprising at least two regions having different material properties and drive or sense means functionally coupled to said semiconductor element. According to the invention, at least one of said regions comprises one or more n-type doping agents, and the relative volumes, doping concentrations, doping agents and/or crystal orientations of the regions being configured so that the temperature sensitivities of the generalized stiffness are opposite in sign at least at one temperature for the regions, and the overall temperature drift of the generalized stiffness of the semiconductor element is 50 ppm or less on a temperature range of 100°C. The device can be a resonator. Also a method of designing the device is disclosed.
(FR) L'invention concerne un dispositif micromécanique comprenant un élément semi-conducteur apte à la déviation ou à la résonance et comprenant au moins deux zones dont le matériau présente des propriétés différentes, ainsi que des moyens de commande ou de détection couplés fonctionnellement audit élément semi-conducteur. Selon l'invention, au moins une desdites zones comprend un ou plusieurs agents dopants de type n et les volumes relatifs, les concentrations en dopant, les agents dopants et/ou les orientations cristallines des zones sont configurés pour que les sensibilités thermiques de la rigidité générale soient de signe opposé au moins à une température donnée des zones, et que la dérive thermique d'ensemble de la rigidité générale de l'élément semi-conducteur soit égale ou inférieure à 50 ppm à une température de l'ordre de 100 °C. Le dispositif peut être un résonateur. L'invention concerne également un procédé de conception du dispositif.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP2707953CN103650343JP2014519260KR1020140026560ES2582328