Processing

Please wait...

Settings

Settings

Goto Application

1. WO2012145219 - IMPROVED LAMPHEAD ATMOSPHERE

Publication Number WO/2012/145219
Publication Date 26.10.2012
International Application No. PCT/US2012/033214
International Filing Date 12.04.2012
IPC
H01L 21/324 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H01L 21/26 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with wave or particle radiation
CPC
F27B 17/0025
FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
27FURNACES; KILNS; OVENS; RETORTS
BFURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
17Furnaces of a kind not covered by any preceding group
0016Chamber type furnaces
0025Especially adapted for treating semiconductor wafers
H01L 21/67115
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67098Apparatus for thermal treatment
67115mainly by radiation
Y02P 10/122
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
10Technologies related to metal processing
10Reduction of greenhouse gas [GHG] emissions
122by capturing or storing CO2
Applicants
  • APPLIED MATERIALS, INC. [US]/[US] (AllExceptUS)
  • RANISH, Joseph M. [US]/[US] (UsOnly)
Inventors
  • RANISH, Joseph M.
Agents
  • PATTERSON, B. Todd
Priority Data
61/478,19522.04.2011US
61/509,82120.07.2011US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) IMPROVED LAMPHEAD ATMOSPHERE
(FR) ATMOSPHÈRE AMÉLIORÉE POUR TÊTE DE LAMPE
Abstract
(EN)
A method and apparatus for thermal processing of semiconductor substrates is disclosed. Each lamp of a lamp assembly is immersed in a thermally conductive atmosphere comprising oxygen. As the lamps are operated, the oxygen reacts with carbon containing species. Consumed oxygen is replaced over time until the thermal conductivity of the atmosphere falls below a tolerance threshold. The atmosphere is then evacuated and replaced.
(FR)
La présente invention concerne un procédé et un appareil de traitement thermique de substrats semi-conducteurs. Chaque lampe d'un ensemble lampe est immergée dans une atmosphère thermoconductrice contenant de l'oxygène. Quand les lampes fonctionnent, l'oxygène réagit avec des espèces contenant du carbone. L'oxygène consommé est remplacé au cours du temps jusqu'à ce que la conductivité thermique de l'atmosphère chute en dessous d'un seuil de tolérance. L'atmosphère est ensuite éliminée et remplacée.
Also published as
Latest bibliographic data on file with the International Bureau