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1. WO2012141105 - PIEZOELECTRIC THIN FILM ELEMENT

Publication Number WO/2012/141105
Publication Date 18.10.2012
International Application No. PCT/JP2012/059561
International Filing Date 06.04.2012
IPC
H01L 41/187 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
16Selection of materials
18for piezo-electric or electrostrictive elements
187Ceramic compositions
C04B 35/00 2006.01
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
35Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
H01L 41/18 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
16Selection of materials
18for piezo-electric or electrostrictive elements
H01L 41/24 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
22Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
24of elements of ceramic composition
CPC
C04B 2235/3201
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
30Constituents and secondary phases not being of a fibrous nature
32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
3201Alkali metal oxides or oxide-forming salts thereof
C04B 2235/3208
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
30Constituents and secondary phases not being of a fibrous nature
32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
3205Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
3208Calcium oxide or oxide-forming salts thereof, e.g. lime
C04B 2235/3213
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
30Constituents and secondary phases not being of a fibrous nature
32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
3205Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
3213Strontium oxides or oxide-forming salts thereof
C04B 2235/3215
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
30Constituents and secondary phases not being of a fibrous nature
32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
3205Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
3215Barium oxides or oxide-forming salts thereof
C04B 2235/3248
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04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
30Constituents and secondary phases not being of a fibrous nature
32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
3231Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
3244Zirconium oxides, zirconates, hafnium oxides, hafnates, or oxide-forming salts thereof
3248Zirconates or hafnates, e.g. zircon
C04B 2235/3251
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
30Constituents and secondary phases not being of a fibrous nature
32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
3231Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
3251Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof
Applicants
  • 株式会社村田製作所 Murata Manufacturing Co., Ltd. [JP]/[JP] (AllExceptUS)
  • 白木 宏 SHIRAKI, Hiroshi [JP]/[JP] (UsOnly)
Inventors
  • 白木 宏 SHIRAKI, Hiroshi
Agents
  • 岡田 全啓 OKADA, Masahiro
Priority Data
2011-09056615.04.2011JP
2011-26434202.12.2011JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) PIEZOELECTRIC THIN FILM ELEMENT
(FR) ELÉMENT DE FILM MINCE PIÉZOÉLECTRIQUE
(JA) 圧電体薄膜素子
Abstract
(EN)
[Problem] To provide a piezoelectric thin film element having excellent electrical characteristics. [Solution] This piezoelectric thin film element is constituted from a substrate (12), a lower electrode (14) formed on the substrate, a piezoelectric thin film (16) formed on the lower electrode, and an upper electrode (18) formed on the piezoelectric thin film. The piezoelectric thin film is a potassium sodium niobate-based thin film, the main components of which are represented by the general formula (1-n)(K1-xNax)NbyO3-nM1M2O3, where M1 is Ca, Sr or Ba, and M2 is Zr, and x, y and n are in the ranges of 0.25 ≤ x ≤ 1.00, 0.85 ≤ y ≤ 1.10, and 0.01 ≤ n ≤ 0.10, respectively. Alternatively, the piezoelectric thin film (16) is a potassium sodium niobate-based thin film, the main components of which are represented by the general formula (1-n)(K1-xNax)NbyO3-nM1M2O3, where M1 is Ca, Sr or Ba, and M2 is Sn or Hf, and x, y and n are in the ranges of 0.25 ≤ x ≤ 1.00, 0.90 ≤ y ≤ 1.05, and 0.01 ≤ n ≤ 0.10, respectively.
(FR)
L'invention concerne un élément de film mince piézoélectrique ayant d'excellentes caractéristiques électriques. Cet élément de film mince piézoélectrique est composé d'un substrat (12), d'une électrode inférieure (14) formée sur le substrat, d'un film mince piézoélectrique (16) formé sur l'électrode inférieure, et d'une électrode supérieure (18) formée sur le film mince piézoélectrique. Le film mince piézoélectrique est représenté par la formule générale (1-n)(K1-xNax)NbyO3-nM1M2O3, dans laquelle M1 représente Ca, Sr ou Ba, M2 est un film mince à base de niobate de potassium et de sodium qui est principalement composé de Zr, et x, y et n se situent dans les plages respectivement de 0,25 ≤ x ≤ 1,00, 0,85 ≤ y ≤ 1,10 et 0,01 ≤ n ≤ 0,10. En variante, le film mince piézoélectrique (16) est représenté par la formule générale (1-n)(K1-xNax)NbyO3-nM1M2O3, dans laquelle M1 représente Ca, Sr ou Ba, M2 est un film mince à base de niobate de potassium et de sodium qui est principalement composé de Sn ou Hf, et x, y et n se situent dans les plages respectivement de 0,25 ≤ x ≤ 1,00, 0,90 ≤ y ≤ 1,05 et 0,01 ≤ n ≤ 0,10.
(JA)
【課題】優れた電気特性を有する圧電体薄膜素子を提供する。 【解決手段】圧電体薄膜素子は、基板12、基板上に形成された下部電極14、下部電極上に形成された圧電体薄膜16、および、圧電体薄膜上に形成された上部電極18にて構成されている。圧電体薄膜は、一般式(1-n)(K1-xNa)Nb-nM1M2Oで表されると共に、M1がCa、SrおよびBaのいずれか一つであり、M2がZrであるものを主成分とするニオブ酸カリウムナトリウム系薄膜であって、x、yおよびnが、それぞれ、0.25≦x≦1.00、0.85≦y≦1.10、0.01≦n≦0.10の範囲である。あるいは、圧電体薄膜16は、一般式(1-n)(K1-xNa)Nb-nM1M2Oで表されると共に、M1がCa、SrおよびBaのいずれか一つであり、M2がSnおよびHfのいずれか一つであるものを主成分とするニオブ酸カリウムナトリウム系薄膜であって、x、yおよびnが、それぞれ、0.25≦x≦1.00、0.90≦y≦1.05、0.01≦n≦0.10の範囲である。
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