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1. WO2012138410 - DEVICE INCLUDING QUANTUM DOTS

Publication Number WO/2012/138410
Publication Date 11.10.2012
International Application No. PCT/US2012/023674
International Filing Date 02.02.2012
IPC
H01L 21/20 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
CPC
H01L 21/02439
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02436Intermediate layers between substrates and deposited layers
02439Materials
H01L 21/02491
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02436Intermediate layers between substrates and deposited layers
02439Materials
02491Conductive materials
H01L 21/02502
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02436Intermediate layers between substrates and deposited layers
02494Structure
02496Layer structure
02502consisting of two layers
H01L 21/02521
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
H01L 21/0256
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02551Group 12/16 materials
0256Selenides
H01L 21/02601
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02587Structure
0259Microstructure
02601Nanoparticles
Applicants
  • QD VISION, INC. [US]/[US] (AllExceptUS)
  • COX, Marshall [US]/[US] (UsOnly)
  • BREEN, Craig [US]/[US] (UsOnly)
  • ZHOU, Zhaoqun [CN]/[US] (UsOnly)
  • STECKEL, Jonathan, S. [US]/[US] (UsOnly)
Inventors
  • COX, Marshall
  • BREEN, Craig
  • ZHOU, Zhaoqun
  • STECKEL, Jonathan, S.
Agents
  • FINNEGAN, Martha, Ann
Priority Data
61/471,14102.04.2011US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) DEVICE INCLUDING QUANTUM DOTS
(FR) DISPOSITIF COMPRENANT DES POINTS QUANTIQUES
Abstract
(EN)
A method for making a device, the method comprising: depositing a layer comprising quantum dots over a first electrode, the quantum dots including ligands attached to the outer surfaces thereof; treating the surface of the deposited layer comprising quantum dots to remove the exposed ligands; and forming a device layer thereover. Also disclosed is a device made in accordance with the disclosed method. Another aspect of the invention relates to a device comprising a first electrode and a second electrode, and a layer comprising quantum dots between the two electrodes, the layer comprising quantum dots deposited from a dispersion that have been treated to remove exposed ligands after formation of the layer in the device. Another aspect of the invention relates to a device comprising a first electrode and a second electrode, a layer comprising a first inorganic semiconductor material disposed between the first and second electrodes, and a plurality of quantum dots disposed between the first and second electrodes, the outer surface of the quantum dots comprising a second inorganic semiconductor material, wherein the composition of the first inorganic semiconductor material and the second inorganic semiconductor material is the same (without regard to any ligands on the outer surface of the quantum dot).
(FR)
L'invention concerne un procédé servant à faire un dispositif, le procédé consistant : à déposer une couche comprenant des points quantiques sur une première électrode, les points quantiques comprenant des ligands attachés sur leur surface extérieure ; à traiter la surface de la couche déposée comprenant des points quantiques pour retirer les ligands exposés ; et à former dessus une couche de dispositif. L'invention concerne aussi un dispositif fait conformément au procédé selon l'invention. Un autre aspect de l'invention concerne un dispositif comprenant une première électrode, une seconde électrode, et une couche comprenant des points quantiques entre les deux électrodes, la couche comprenant des points quantiques déposés à partir d'une dispersion qui ont été traités pour retirer les ligands exposés après la formation de la couche dans le dispositif. Un autre aspect de l'invention concerne un dispositif comprenant une première électrode et une seconde électrode, une couche comprenant un premier matériau semi-conducteur inorganique disposé entre les première et seconde électrodes, et une pluralité de points quantiques disposés entre les première et seconde électrodes, la surface extérieure des points quantiques comprenant un second matériau semi-conducteur inorganique, la composition du premier matériau semi-conducteur inorganique et du second matériau semi-conducteur inorganique étant identique (sans considération de tout ligand sur la surface extérieure du point quantique).
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