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1. WO2012134910 - METHOD OF SLIMMING RADIATION-SENSITIVE MATERIAL LINES IN LITHOGRAPHIC APPLICATIONS

Publication Number WO/2012/134910
Publication Date 04.10.2012
International Application No. PCT/US2012/029905
International Filing Date 21.03.2012
IPC
G03F 7/20 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
G03F 7/32 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
30Imagewise removal using liquid means
32Liquid compositions therefor, e.g. developers
G03F 7/40 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
40Treatment after imagewise removal, e.g. baking
CPC
G03F 7/2024
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
2022Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
2024of the already developed image
G03F 7/32
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
30Imagewise removal using liquid means
32Liquid compositions therefor, e.g. developers
G03F 7/40
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
40Treatment after imagewise removal, e.g. baking
H01L 21/0273
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
0271comprising organic layers
0273characterised by the treatment of photoresist layers
H01L 21/0274
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
0271comprising organic layers
0273characterised by the treatment of photoresist layers
0274Photolithographic processes
H01L 21/67207
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67155Apparatus for manufacturing or treating in a plurality of work-stations
67207comprising a chamber adapted to a particular process
Applicants
  • TOKYO ELECTRON LIMITED [JP]/[JP] (AllExceptUS)
  • TOKYO ELECTRON AMERICA, INC. [US]/[US] (JP)
  • CARCASI, Michael, A. [US]/[US] (UsOnly)
  • RATHSACK, Benjamin, M. [US]/[US] (UsOnly)
  • SOMERVELL, Mark, H. [US]/[US] (UsOnly)
Inventors
  • CARCASI, Michael, A.
  • RATHSACK, Benjamin, M.
  • SOMERVELL, Mark, H.
Agents
  • DAVIDSON, Kristi, L.
Priority Data
13/077,83331.03.2011US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD OF SLIMMING RADIATION-SENSITIVE MATERIAL LINES IN LITHOGRAPHIC APPLICATIONS
(FR) PROCÉDÉ POUR AMINCIR DES LIGNES DE MATIÈRE RADIOSENSIBLE DANS DES APPLICATIONS LITHOGRAPHIQUES
Abstract
(EN)
A method and system for patterning a substrate (101, 201, 301, 401 ) using a radiation-sensitive material (102, 202, 302, 402) is described. The method and system include forming a layer of radiation-sensitive material (102, 202, 302, 402) on a substrate (101, 201, 301, 401 ), exposing the layer of radiation-sensitive material (102, 202, 302, 402) to a pattern of radiation (107, 207, 307, 407), and then performing a post-exposure bake following the exposing. The imaged layer of radiation-sensitive material (101, 201, 301, 401 ) is then developed to remove either a region (105, 205,312, 412) having high radiation exposure or a region (106, 206, 313, 413) having low radiation exposure to form radiation-sensitive material lines. An exposure gradient within the radiation-sensitive material lines is then removed, followed by slimming the radiation-sensitive material lines.
(FR)
L'invention concerne un procédé et un système pour déposer un motif sur un substrat (101, 201, 301, 401) au moyen d'une matière radiosensible (102, 202, 302, 402). Le procédé et le système comprennent les opérations consistant à former une couche de matière radiosensible (102, 202, 302, 402) sur un substrat (101, 201, 301, 401), exposer la couche de matière radiosensible (102, 202, 302, 402) à un motif de rayonnement (107, 207, 307, 407) et effectuer ensuite une cuisson post-exposition à la suite de l'exposition. La couche insolée de matière radiosensible (101, 201, 301, 401) est ensuite développée pour éliminer soit une région (105, 205, 312, 412) ayant eu une forte exposition au rayonnement soit une région (106, 206, 313, 413) ayant eu une faible exposition au rayonnement pour former des lignes de matière radiosensible. On élimine ensuite un gradient d'exposition à l'intérieur des lignes de matière radiosensible, puis suit un amincissement des lignes de matière radiosensible.
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