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1. WO2012133585 - PLASMA ETCHING DEVICE, AND PLASMA ETCHING METHOD

Publication Number WO/2012/133585
Publication Date 04.10.2012
International Application No. PCT/JP2012/058244
International Filing Date 28.03.2012
IPC
H01L 21/3065 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
H05H 1/46 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1Generating plasma; Handling plasma
24Generating plasma
46using applied electromagnetic fields, e.g. high frequency or microwave energy
CPC
H01J 2237/334
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2237Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
32Processing objects by plasma generation
33characterised by the type of processing
334Etching
H01J 37/32082
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
32082Radio frequency generated discharge
H01J 37/32091
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
32082Radio frequency generated discharge
32091the radio frequency energy being capacitively coupled to the plasma
H01J 37/32165
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
32082Radio frequency generated discharge
32137controlling of the discharge by modulation of energy
32155Frequency modulation
32165Plural frequencies
H01J 37/32651
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32431Constructional details of the reactor
32623Mechanical discharge control means
32651Shields, e.g. dark space shields, Faraday shields
H01J 37/32715
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32431Constructional details of the reactor
32715Workpiece holder
Applicants
  • 東京エレクトロン株式会社 Tokyo Electron Limited [JP]/[JP] (AllExceptUS)
  • 土場 重樹 DOBA, Shigeki [JP]/[JP] (UsOnly)
  • 山田 哲史 YAMADA, Satoshi [JP]/[JP] (UsOnly)
Inventors
  • 土場 重樹 DOBA, Shigeki
  • 山田 哲史 YAMADA, Satoshi
Agents
  • 伊東 忠彦 ITOH, Tadahiko
Priority Data
2011-07319129.03.2011JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) PLASMA ETCHING DEVICE, AND PLASMA ETCHING METHOD
(FR) DISPOSITIF DE GRAVURE PAR PLASMA ET PROCÉDÉ DE GRAVURE PAR PLASMA
(JA) プラズマエッチング装置及びプラズマエッチング方法
Abstract
(EN)
A plasma etching device for plasma etching a substrate of which the surface is formed with a resist pattern and of which the base surface is exposed at the outer circumference portion of the substrate, the plasma etching device being provided with: a support part (6) for supporting the substrate; a cover member (5) disposed so as to cover the outer circumference portion of the substrate supported by means of the support part (6) and for preventing plasma from reaching the outer circumference portion of the substrate; and irradiating parts (2, 16) for etching the substrate supported by means of the supporting part (6) by using plasma generated by controlling the application of high frequency power and the supply of treatment gas for etching while the outer circumference portion is covered by means of the cover member (5) and for removing the resist pattern on the substrate subjected to etching by using the plasma generated by controlling the application of high frequency power and the supply of treatment gas for etching after the aforementioned etching process is performed.
(FR)
L'invention concerne un dispositif de gravure par plasma pour graver par plasma un substrat dont la surface est formée pourvu d'un motif de résist et dont la surface de base est exposée à la partie de circonférence externe du substrat, le dispositif de gravure par plasma comportant : une partie de support (6) pour supporter le substrat ; un élément de recouvrement (5) disposé de façon à recouvrir la partie de circonférence externe du substrat supporté au moyen de la partie de support (6) et pour empêcher un plasma d'atteindre la partie de circonférence externe du substrat ; et des parties d'irradiation (2, 16) pour graver le substrat supporté au moyen de la partie de support (6) par utilisation d'un plasma généré par régulation de l'application d'une puissance de fréquence élevée et de l'introduction de gaz de traitement pour graver alors que la partie de circonférence externe est recouverte par l'élément de recouvrement (5) et pour retirer le motif de résist sur le substrat soumis à une gravure par utilisation du plasma généré par régulation de l'application d'une puissance à haute fréquence et de l'introduction d'un gaz de traitement pour graver après que le procédé de gravure précédemment mentionné est effectué.
(JA)
 基板の表面にレジストパターンが形成され、基板の外周部において基板の基体表面が露出している基板にプラズマエッチングを行うプラズマエッチング装置において、基板を支持する支持部6と、支持部6に支持されている基板の外周部を覆うように設けられており、プラズマが基板の外周部に回り込むことを防止するカバー部材5と、高周波電力の印加とエッチング用の処理ガスの供給とを制御することにより生成したプラズマによって、外周部がカバー部材5に覆われた状態で、支持部に支持されている基板にエッチングを行い、該エッチング後、高周波電力の印加とアッシング用の処理ガスの供給とを制御することにより生成したプラズマによって、エッチングが行われた基板のレジストパターンのアッシングを行う照射部2、16とを有する。
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