WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2012128960) ELECTRODE TREATMENTS FOR ENHANCED DRAM PERFORMANCE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/128960    International Application No.:    PCT/US2012/028190
Publication Date: 27.09.2012 International Filing Date: 08.03.2012
IPC:
H01L 21/02 (2006.01), H01L 21/331 (2006.01)
Applicants: INTERMOLECULAR, INC. [US/US]; 3011 N. First Street San Jose, CA 95134 (US) (For All Designated States Except US).
RUI, Xiangxin [CN/US]; (US) (For US Only).
CHEN, Hanhong [CN/US]; (US) (For US Only).
HAYWOOD, Edward [US/US]; (US) (For US Only).
MALHOTRA, Sandra [US/US]; (US) (For US Only).
ARAO, Takasahi [JP/JP]; (JP) (For US Only).
FUJIWARA, Naonori [JP/JP]; (JP) (For US Only).
HIROTA, Toshiyuki [JP/JP]; (JP) (For US Only).
KIYOMURA, Takakazu [JP/JP]; (JP) (For US Only).
KOYANAGI, Kenichi [JP/JP]; (JP) (For US Only)
Inventors: RUI, Xiangxin; (US).
CHEN, Hanhong; (US).
HAYWOOD, Edward; (US).
MALHOTRA, Sandra; (US).
ARAO, Takasahi; (JP).
FUJIWARA, Naonori; (JP).
HIROTA, Toshiyuki; (JP).
KIYOMURA, Takakazu; (JP).
KOYANAGI, Kenichi; (JP)
Agent: HELMS, Jr., Aubrey L.; Intermolecular, Inc. 3011 N. First Street San Jose, CA 95134 (US)
Priority Data:
13/051,531 18.03.2011 US
Title (EN) ELECTRODE TREATMENTS FOR ENHANCED DRAM PERFORMANCE
(FR) TRAITEMENTS D'ÉLECTRODE POUR OBTENIR UNE EFFICACITÉ ACCRUE DE DRAM
Abstract: front page image
(EN)A method for fabricating a dynamic random access memory capacitor is disclosed. The method may comprise depositing a first titanium nitride (TiN) electrode; creating a first layer of titanium dioxide (Ti02) on the first TiN electrode; depositing a dielectric material on the first layer of titanium dioxide; and depositing a second TiN electrode on the dielectric material.
(FR)L'invention concerne un procédé de fabrication d'un condensateur de mémoire vive dynamique. Le procédé comprend les étapes consistant à déposer une première électrode de nitrure de titane (TiN); former une première couche de dioxyde de titane (Ti0) sur la première électrode de TiN; déposer une matière diélectrique sur la première couche de dioxyde de titane; et déposer une deuxième électrode de TiN sur la matière diélectrique.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)