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1. (WO2012126268) THIN FILM FILLING METHOD
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2012/126268 International Application No.: PCT/CN2012/000092
Publication Date: 27.09.2012 International Filing Date: 18.01.2012
IPC:
H01L 21/762 (2006.01) ,H01L 21/76 (2006.01) ,H01L 21/316 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
76
Making of isolation regions between components
762
Dielectric regions
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
76
Making of isolation regions between components
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314
Inorganic layers
316
composed of oxides or glassy oxides or oxide-based glass
Applicants: MENG, Lingkuan[CN/CN]; CN (UsOnly)
INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES[CN/CN]; No.3 Beitucheng West Road Chaoyang District, Beijing 100029, CN (AllExceptUS)
Inventors: MENG, Lingkuan; CN
Agent: CHINA PATENT AGENT (H.K.) LTD.; 22/F Great Eagle Center 23 Harbour Road, Wanchai Hong Kong, CN
Priority Data:
201110070705.723.03.2011CN
Title (EN) THIN FILM FILLING METHOD
(FR) PROCÉDÉ DE REMPLISSAGE D'UN FILM MINCE
(ZH) 一种薄膜填充方法
Abstract:
(EN) Disclosed is a thin film filling method, comprising: first supplying into a reaction chamber reaction gases comprising a silicon-containing gas, an oxygen-containing gas, an inert gas and a flowability gas (201); forming a first deposition film in the channels or gaps via an HDP CVD process (202); stop supplying the silicon-containing gas and the oxygen-containing gas and continue supplying an etching gas and the flowability gas to sputter the surface of the first deposition film (203); stop supplying the etching gas and continue to supplying the silicon-containing gas and the oxygen-containing gas to perform film deposition on the sputtered surface of the first deposition film to form a second deposition film (204); stop supplying the silicon-containing gas and the oxygen-containing gas and continue supplying the etching gas and the flowability gas to sputter the surface of the second deposition film (205); repeating the last steps, stop supplying the etching gas and continue supplying the silicon-containing gas and the oxygen-containing gas to perform film deposition on the sputtered surface of the second deposition film to form a third deposition film that completely fills the channels or gaps (206).
(FR) L'invention concerne un procédé de remplissage d'un film mince qui consiste d'abord à introduire dans une chambre de réaction des gaz de réaction comprenant un gaz contenant du silicium, un gaz contenant de l'oxygène, un gaz inerte et un gaz d'écoulement (201) ; former un premier film de dépôt dans les canaux ou lacunes par un procédé HDP CVD (202) ; interrompre l'introduction du gaz contenant du silicium et du gaz contenant de l'oxygène et poursuivre l'introduction d'un gaz de gravure et du gaz d'écoulement pour pulvériser la surface du premier film de dépôt (203) ; interrompre l'introduction du gaz de gravure et poursuivre l'introduction du gaz contenant du silicium et du gaz contenant de l'oxygène pour effectuer un dépôt de film sur la surface pulvérisée du premier film de dépôt afin de former un deuxième film de dépôt (204) ; interrompre l'introduction du gaz contenant du silicium et du gaz contenant de l'oxygène et poursuivre l'introduction du gaz de gravure et du gaz d'écoulement pour pulvériser la surface du deuxième film de dépôt (205) ; en répétant les dernières étapes, interrompre l'introduction du gaz de gravure et poursuivre l'introduction du gaz contenant du silicium et du gaz contenant de l'oxygène pour effectuer un dépôt de film sur la surface pulvérisée du deuxième film de dépôt afin de former un troisième film de dépôt qui remplit entièrement les canaux ou lacunes (206).
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)