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1. (WO2012125401) NOVEL ETCHING COMPOSITION

Pub. No.:    WO/2012/125401    International Application No.:    PCT/US2012/028249
Publication Date: Fri Sep 21 01:59:59 CEST 2012 International Filing Date: Fri Mar 09 00:59:59 CET 2012
IPC: C09K 13/00
Applicants: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.
FUJIFILM CORPORATION
TAKAHASHI, Tomonori
INABA, Tadashi
MIZUTANI, Atsushi
DU, Bing
WOJTCZAK, William A.
TAKAHASHI, Kazutaka
KAMIMURA, Tetsuya
Inventors: TAKAHASHI, Tomonori
INABA, Tadashi
MIZUTANI, Atsushi
DU, Bing
WOJTCZAK, William A.
TAKAHASHI, Kazutaka
KAMIMURA, Tetsuya
Title: NOVEL ETCHING COMPOSITION
Abstract:
This disclosure relates to an etching composition containing at least one sulfonic acid, at least one compound containing a halide anion, the halide being chloride or bromide, at least one compound containing a nitrate or nitrosyl ion, and water. The at least one sulfonic acid can be from about 25% by weight to about 95% by weight of the composition. The halide anion can be chloride or bromide, and can be from about 0.01% by weight to about 0.5% by weight of the composition. The nitrate or nitrosyl ion can be from about 0.1% by weight to about 20% by weight of the composition. The water can be at least about 3% by weight of the composition.