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1. (WO2012124856) NITRIDE SEMICONDUCTOR-BASED SOLAR CELL AND MANUFACTURING METHOD THEREOF
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2012/124856 International Application No.: PCT/KR2011/003650
Publication Date: 20.09.2012 International Filing Date: 17.05.2011
IPC:
H01L 31/042 (2006.01) ,H01L 31/0236 (2006.01)
Applicants: LEE, Dong Seon[KR/KR]; KR (UsOnly)
BAE, Si Young[KR/KR]; KR (UsOnly)
KIM, Do Hyung[KR/KR]; KR (UsOnly)
BAEK, Jong Hyeob[KR/KR]; KR (UsOnly)
LEE, Seung Jae[KR/KR]; KR (UsOnly)
GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY[KR/KR]; 1 Oryong-dong, Buk-gu Gwangju 500-712, KR (AllExceptUS)
Inventors: LEE, Dong Seon; KR
BAE, Si Young; KR
KIM, Do Hyung; KR
BAEK, Jong Hyeob; KR
LEE, Seung Jae; KR
Agent: E-SANG PATENT & TRADEMARK LAW FIRM; 3F., Woodo Bldg. 82-2 Yangjae-dong, Seocho-gu Seoul 137-890, KR
Priority Data:
10-2011-002277715.03.2011KR
Title (EN) NITRIDE SEMICONDUCTOR-BASED SOLAR CELL AND MANUFACTURING METHOD THEREOF
(FR) CELLULE SOLAIRE À BASE D'UN SEMI-CONDUCTEUR NITRURE ET SON PROCÉDÉ DE FABRICATION
(KO) 질화물 반도체 기반의 태양전지 및 그 제조방법
Abstract: front page image
(EN) Disclosed are a nitride semiconductor-based solar cell including a photoactive layer having a wide area for incident light and a manufacturing method thereof. An opening is formed on a mask layer which partially shields a first n-type nitride semiconductor layer. The first n-type nitride semiconductor layer is exposed through the opening and a second n-type nitride semiconductor layer is grown on the basis of the exposed first n-type nitride semiconductor layer. The grown second n-type nitride semiconductor layer is buried in the opening and formed in a hexagonal pyramid form. In addition, a photoactive layer and a p-type nitride semiconductor layer are sequentially formed along the second n-type nitride semiconductor layer. Therefore, a hole injection-electron pair is easily formed by the incident light. Furthermore, the area of the photoactive layer is enlarged and photoelectric conversion efficiency is increased.
(FR) L'invention concerne une cellule solaire à base d'un semi-conducteur nitrure comprenant une couche photoactive ayant une large surface pour une lumière incidente, et son procédé de fabrication. Une ouverture est formée sur une couche de masque qui protège partiellement une première couche de semi-conducteur nitrure de type n. La première couche de semi-conducteur nitrure de type n est exposée à travers l'ouverture et une seconde couche de semi-conducteur nitrure de type n est amené à croître sur la base de la première couche de semi-conducteur nitrure de type n, exposée. La seconde couche de semi-conducteur nitrure de type n, ayant subi la croissance, est enfouie dans l'ouverture et façonnée sous une forme de pyramide hexagonale. De plus, une couche photoactive et une couche de semi-conducteur nitrure de type p sont formées de façon séquentielle le long de la seconde couche de semi-conducteur nitrure de type n. En conséquence, une paire injection de trou-électron est aisément formée par la lumière incidente. De plus, la surface de la couche photoactive est agrandie et le rendement de conversion photoélectrique est augmenté.
(KO) 입사광에 대해 넓은 면적을 가지는 광활성층이 구비된 질화물 반도체 기반의 태양전지 및 이의 제조방법이 개시된다. 제1 n형 질화물 반도체층을 일부 차폐하는 마스크층에는 개구부가 형성된다. 개구부를 통해 제1 n형 질화물 반도체층은 노출되고, 노출된 제1 n형 질화물 반도체층을 근거로 제2 n형 질화물 반도체층은 성장된다. 성장된 제2 n형 질화물 반도체층은 개구부를 매립하고, 육각형의 피라미드 형상으로 형성된다. 또한, 이를 따라 광활성층 및 p형 질화물 반도체층은 순차적으로 형성된다. 따라서, 입사광에 의해 정공-전자쌍의 형성은 용이하게 이루어진다. 또한, 광활성층의 면적은 확장되어 광전변환효율은 상승된다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)