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1. (WO2012122871) MEMS MICROPHONE AND FORMING METHOD THEREFOR
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/122871    International Application No.:    PCT/CN2012/071441
Publication Date: 20.09.2012 International Filing Date: 22.02.2012
IPC:
H04R 31/00 (2006.01)
Applicants: MEMSEN ELECTRONICS INC [CN/CN]; 518 Room 5F, Building A3, Magnetic Plaza Binshuixi Road, Nankai District Tianjin 300381 (CN) (For All Designated States Except US).
LIU, Lianjun [US/CN]; (CN) (For US Only)
Inventors: LIU, Lianjun; (CN)
Agent: UNITALEN ATTORNEYS AT LAW; 7th Floor, Scitech Place No. 22, Jian Guo Men Wai Ave. Chaoyang District, Beijing 100004 (CN)
Priority Data:
201110061561.9 15.03.2011 CN
Title (EN) MEMS MICROPHONE AND FORMING METHOD THEREFOR
(FR) STRUCTURE DE MICROPHONE MEMS ET SON PROCÉDÉ DE FORMATION
(ZH) MEMS麦克风结构及其形成方法
Abstract: front page image
(EN)A micro-electro-mechanical system (MEMS) microphone and a forming method therefor. The MEMS microphone comprises: a first substrate, the first substrate is provided with a first bonding face, the first substrate comprises an MEMS microphone component and a first conductive bonding structure arranged on the first bonding face, a second substrate, the second substrate is provided with a second bonding face, the second bonding substrate comprises a circuit and a second conductive bonding structure arranged on the second bonding face; the first substrate and the second substrate are oppositely fitted together via the first conductive bonding structure and the second conductive bonding structure. Embodiments of the present invention have a simple packaging technique and a compact size; the MEMS microphone packaging structure formed has a great performance on signal-to-noise ratio, and a great anti-interference capability.
(FR)Structure de microphone à microsystème électromécanique (MEMS) et son procédé de formation, lequel microphone MEMS comprend : un premier matériau de base présentant une première surface de liaison qui comprend à son tour un composant MEMS et sur laquelle première surface de liaison repose une première structure de liaison conductrice; et un second matériau de base présentant une seconde structure de liaison qui comprend à son tour un circuit et sur laquelle vient une seconde structure de liaison conductrice. Le premier matériau de base et le second matériau de base sont assemblés face à face moyennant la première structure de liaison conductrice et la seconde structure de liaison conductrice. Selon un mode de réalisation de cette invention la mise en boîtier est aisée, la structure est compacte, le rapport signal/bruit de la structure de mise en boîtier du microphone MEMS ainsi obtenu et la caractéristique anti-brouillage sont satisfaisants.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)