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Pub. No.:    WO/2012/122814    International Application No.:    PCT/CN2011/082260
Publication Date: 20.09.2012 International Filing Date: 16.11.2011
H01Q 15/00 (2006.01)
Applicants: KUANG-CHI INSTITUTE OF ADVANCED TECHNOLOGY [CN/CN]; Software Building, No.9 GaoxinZhong 1st Road High-Tech Industrial Estate, Nanshan District Shenzhen, Guangdong 518057 (CN) (For All Designated States Except US).
KUANG-CHI INNOVATIVE TECHNOLOGY LTD. [CN/CN]; 18B,Block A, CIC International Business Center No.1061 of XiangMei Road, FuTian District Shenzhen, Guangdong 518034 (CN) (For All Designated States Except US).
LIU, Ruopeng [CN/CN]; (CN) (For US Only).
LIAO, Zhen [CN/CN]; (CN) (For US Only).
LUAN, Lin [CN/CN]; (CN) (For US Only).
ZHAO, Zhiya [CN/CN]; (CN) (For US Only)
Inventors: LIU, Ruopeng; (CN).
LIAO, Zhen; (CN).
LUAN, Lin; (CN).
ZHAO, Zhiya; (CN)
Agent: CHINA WISPRO INTELLECTUAL PROPERTY LLP.; Room A806, Zhongdi Building South of High-Tech Industrial Park, Nanshan District Shenzhen, Guangdong 518057 (CN)
Priority Data:
201110061851.3 15.03.2011 CN
201110061874.4 15.03.2011 CN
(ZH) 一种电磁透明的超材料
Abstract: front page image
(EN)The present invention relates to an electromagnetically-transparent metamaterial. Said material comprises: a base material and multiple artificial metallic microstructures periodically arranged inside the base material. When an electromagnetic wave passes through the metamaterial, the artificial metallic microstructures when perpendicular to the direction of incidence of the electromagnetic wave and when parallel to the direction of incidence of the electromagnetic wave are equivalent to two identical two-dimensional circuits formed by an inductance branch and two identical capacitance branches symmetric to and parallely connected to said inductance branch. The two-dimensional circuits correspond to the frequency band of the electromagnetic wave, enabling both the dielectric constant and the magnetic permeability of the metamaterial to be essentially 1 when said electromagnetic wave passes through the metamaterial. The present invention uses wave-transparency principles that are different from those used in traditional electromagnetically-transparent material, allowing the electromagnetic-wave transparency properties to be not limited by the substance of the base material, and thereby improving to the greatest extent possible the range of applications for electromagnetically-transparent material.
(FR)L'invention concerne un métamatériau électromagnétique transparent comprenant un substrat dans lequel sont périodiquement disposées une pluralité de microstructures métalliques artificielles. Lorsque l'onde électromagnétique traverse le métamatériau, les microstructures métalliques artificielles dont la direction d'incidence de l'onde électromagnétique est verticale et dont la direction d'incidence de l'onde électromagnétique est parallèle équivalent à deux circuits bidimensionnel identiques constitués d'un branchement inductif et de deux branchements capacitifs symétriques et montés en parallèle au branchement inductif, les circuits bidimensionnels correspondant à une bande de fréquence de l'onde électromagnétiques de telle sorte que le taux de conductivité et la constante diélectrique du métamatériau soient essentiellement équivalents à 1. La présente invention se fonde sur le principe de la transparence des ondes qui diffère de ceux utilisés dans les matériaux électromagnétiques transparents classiques de manière que la caractéristique de transparence des ondes électromagnétiques ne se limite pas aux matériaux du substrat mais améliore sensiblement les applications des matériaux transparents électromagnétiques.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)