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1. (WO2012122804) ARTIFICIAL MICROSTRUCTURE AND ARTIFICIAL ELECTROMAGNETIC MATERIAL USING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/122804    International Application No.:    PCT/CN2011/081374
Publication Date: 20.09.2012 International Filing Date: 27.10.2011
IPC:
H01Q 15/02 (2006.01), H01Q 15/24 (2006.01)
Applicants: KUANG-CHI INSTITUTE OF ADVANCED TECHNOLOGY [CN/CN]; Software Building, No.9 GaoxinZhong 1st Road High-Tech Industrial Estate, Nanshan Shenzhen, Guangdong 518057 (CN) (For All Designated States Except US).
KUANG-CHI INNOVATIVE TECHNOLOGY LTD. [CN/CN]; 18B, Block A, CIC International Business Center No.1061 of XiangMei Road, FuTian Shenzhen, Guangdong 518034 (CN) (For All Designated States Except US).
LIU, Ruopeng [CN/CN]; (CN) (For US Only).
WANG, Jinjin [CN/CN]; (CN) (For US Only).
ZHAO, Zhiya [CN/CN]; (CN) (For US Only).
LUAN, Lin [CN/CN]; (CN) (For US Only).
KOU, Chaofeng [CN/CN]; (CN) (For US Only).
XIE, Xin [CN/CN]; (CN) (For US Only).
ZHONG, Guo [CN/CN]; (CN) (For US Only).
YE, Jincai [CN/CN]; (CN) (For US Only)
Inventors: LIU, Ruopeng; (CN).
WANG, Jinjin; (CN).
ZHAO, Zhiya; (CN).
LUAN, Lin; (CN).
KOU, Chaofeng; (CN).
XIE, Xin; (CN).
ZHONG, Guo; (CN).
YE, Jincai; (CN)
Agent: GUANGZHOU SCIHEAD PATENT AGENT CO.. LTD; Room 1508, Huihua Commercial & Trade Building No. 80, XianLie Zhong Road, Yuexiu Guangzhou, Guangdong 510070 (CN)
Priority Data:
201110061804.9 15.03.2011 CN
201110108661.2 28.04.2011 CN
201110108562.4 28.04.2011 CN
201110111984.7 30.04.2011 CN
201110145751.9 01.06.2011 CN
201110145729.4 01.06.2011 CN
Title (EN) ARTIFICIAL MICROSTRUCTURE AND ARTIFICIAL ELECTROMAGNETIC MATERIAL USING SAME
(FR) MICROSTRUCTURE ARTIFICIELLE ET MATÉRIAU ÉLECTROMAGNÉTIQUE ARTIFICIEL UTILISANT CELLE-CI
(ZH) 一种人造微结构及其应用的人工电磁材料
Abstract: front page image
(EN)The present invention provides an artificial microstructure for use in an artificial electromagnetic material. The artificial microstructure comprises a first line segment, a second line segment, and a third line segment. The first line segment and the second line segment are parallel. The third line segment lies between and connects with the first line segment and the second line segment. The artificial electromagnetic material of the present invention is a novel material having special electromagnetic effects. The artificial electromagnetic material can replace the electromagnetic material of the prior art that is used in various electromagnetic wave application systems.
(FR)L'invention concerne une microstructure artificielle utilisée avec un matériau électromagnétique artificiel. Ce matériau électromagnétique artificiel comprend un premier, un deuxième et un troisième segment, les premier et deuxième segments étant mutuellement parallèles, le troisième segment étant connecté entre les premier et deuxième segments. Le matériau électromagnétique artificiel de cette invention est un nouveau matériau à effet électromagnétique spécifique susceptible de remplacer les matériaux électromagnétiques de l'état de la technique utilisés dans toute sorte de systèmes d'application à ondes électromagnétiques.
(ZH)本发明提供了一种用于人工电磁材料的人造微结构。所述人造微结构包括第一线段、第二线段及第三线段,所述第一线段与所述第二线段平行,所述第三线段连接于所述第一线段与所述第二线段之间。本发明人工电磁材料是具有特殊电磁效应的新型材料,该人工电磁材料可替代现有的电磁材料应用到各种电磁波的应用系统。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)