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1. (WO2012121332) OXIDE FOR SEMICONDUCTOR LAYER FOR THIN FILM TRANSISTOR, SEMICONDUCTOR LAYER FOR THIN FILM TRANSISTOR WHICH COMPRISES SAID OXIDE, AND THIN FILM TRANSISTOR
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/121332    International Application No.:    PCT/JP2012/055966
Publication Date: 13.09.2012 International Filing Date: 08.03.2012
IPC:
H01L 29/786 (2006.01), G02F 1/1368 (2006.01), G09F 9/30 (2006.01), H01L 21/336 (2006.01), H01L 21/363 (2006.01), H01L 51/50 (2006.01), H05B 33/10 (2006.01)
Applicants: KABUSHIKI KAISHA KOBE SEIKO SHO [JP/JP]; 10-26, Wakinohama-cho 2-chome, Chuo-ku, Kobe-shi, Hyogo 6518585 (JP) (For All Designated States Except US).
Samsung Display Co., Ltd. [KR/KR]; 95, Samsung 2 Ro, Giheung-gu, Yongin-city, Gyeonggi-do (KR) (For All Designated States Except US).
TAO, Hiroaki; (For US Only).
MIKI, Aya; (For US Only).
MORITA, Shinya; (For US Only).
YASUNO, Satoshi; (For US Only).
KUGIMIYA, Toshihiro; (For US Only).
PARK, Jae Woo [KR/KR]; (KR) (For US Only).
LEE, Je Hun [KR/KR]; (KR) (For US Only).
AHN, Byung Du [KR/KR]; (KR) (For US Only).
KIM, Gun Hee [KR/KR]; (KR) (For US Only)
Inventors: TAO, Hiroaki; .
MIKI, Aya; .
MORITA, Shinya; .
YASUNO, Satoshi; .
KUGIMIYA, Toshihiro; .
PARK, Jae Woo; (KR).
LEE, Je Hun; (KR).
AHN, Byung Du; (KR).
KIM, Gun Hee; (KR)
Agent: UEKI, Kyuichi; Fujita-Toyobo Building 9th floor, 1-16, Dojima 2-chome, Kita-ku, Osaka-shi, Osaka 5300003 (JP)
Priority Data:
2011-052179 09.03.2011 JP
2011-289740 28.12.2011 JP
Title (EN) OXIDE FOR SEMICONDUCTOR LAYER FOR THIN FILM TRANSISTOR, SEMICONDUCTOR LAYER FOR THIN FILM TRANSISTOR WHICH COMPRISES SAID OXIDE, AND THIN FILM TRANSISTOR
(FR) OXYDE POUR COUCHE SEMI-CONDUCTRICE POUR TRANSISTOR À COUCHE MINCE, COUCHE SEMI-CONDUCTRICE POUR TRANSISTOR À COUCHE MINCE COMPRENANT LEDIT OXYDE ET TRANSISTOR À COUCHE MINCE
(JA) 薄膜トランジスタの半導体層用酸化物、上記酸化物を備えた薄膜トランジスタの半導体層および薄膜トランジスタ
Abstract: front page image
(EN)This oxide for a thin film transistor is an In-Zn-Sn-based oxide containing at least In, Zn and Sn, wherein, when the contents (at.%) of the metal elements contained in the In-Zn-Sn-based oxide are respectively expressed by [Zn], [Sn] and [In], formulae (2) and (4) are fulfilled when the formula [In]/([In]+[Sn]) ≤ 0.5 is held and formulae (1), (3) and (4) are fulfilled when the formula [In]/([In]+[Sn]) > 0.5 is held. [In]/([In]+[Zn]+[Sn]) ≤ 0.3 (1) [In]/([In]+[Zn]+[Sn]) ≤ 1.4×{[Zn]/([Zn]+[Sn])}-0.5 (2) [Zn]/([In]+[Zn]+[Sn]) ≤ 0.83 (3) 0.1 ≤ [In]/([In]+[Zn]+[Sn]) (4) According to the present invention, an oxide thin film for a thin film transistor can be produced, which has excellent TFT switching properties, a high sputtering rate during sputtering, and a properly controlled etching rate during wet etching.
(FR)La présente invention concerne un oxyde pour un transistor à couche mince, ledit oxyde étant un oxyde à base de In-Zn-Sn contenant au moins In, Zn et Sn, les formules (2) et (4), lorsque les teneurs (en %) des éléments métalliques contenus dans l'oxyde à base de In-Zn-Sn sont respectivement exprimées par [Zn], [Sn] et [In], étant satisfaites lorsque la formule [In]/([In]+[Sn]) ≤ 0,5 est maintenue et les formules (1), (3) et (4) étant satisfaites lorsque la formule [In]/([In]+[Sn]) > 0,5 est maintenue. [In]/([In]+[Zn]+[Sn]) ≤ 0,3 (1) [In]/([In]+[Zn]+[Sn]) ≤ 1,4×{[Zn]/([Zn]+[Sn])}-0,5 (2) [Zn]/([In]+[Zn]+[Sn]) ≤ 0,83 (3) 0,1 ≤ [In]/([In]+[Zn]+[Sn]) (4) Selon la présente invention, une mince couche d'oxyde pour un transistor à couche mince peut être produite, présentant d'excellentes propriétés de commutation TFT, un taux élevé de pulvérisation cathodique pendant une pulvérisation cathodique et une vitesse de gravure commandée correctement pendant une gravure humide.
(JA) 本発明の薄膜トランジスタ用酸化物は、In、Zn、およびSnを少なくとも含むIn-Zn-Sn系酸化物であって、In-Zn-Sn系酸化物に含まれる金属元素の含有量(原子%)をそれぞれ、[Zn]、[Sn]、および[In]としたとき、[In]/([In]+[Sn])≦0.5のときは下式(2)、(4)を満足し;[In]/([In]+[Sn])>0.5のときは下式(1)、(3)、(4)を満足するものである。 [In]/([In]+[Zn]+[Sn])≦0.3・・・(1) [In]/([In]+[Zn]+[Sn]) ≦1.4×{[Zn]/([Zn]+[Sn])}-0.5・・・(2) [Zn]/([In]+[Zn]+[Sn])≦0.83・・・(3) 0.1≦[In]/([In]+[Zn]+[Sn])・・・(4) 本発明によれば、TFTのスイッチング特性に優れ、スパッタリング時のスパッタレートが高く、且つ、ウェットエッチング時のエッチングレートが適切に制御された薄膜トランジスタ用酸化物薄膜が得られる。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)