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1. (WO2012121263) A METHOD OF FORMING A CAPACITOR STRUCTURE, AND A SILICON ETCHING LIQUID USED IN THIS METHOD
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/121263    International Application No.:    PCT/JP2012/055726
Publication Date: 13.09.2012 International Filing Date: 28.02.2012
IPC:
H01L 21/308 (2006.01), H01L 21/306 (2006.01), H01L 21/8242 (2006.01), H01L 27/108 (2006.01)
Applicants: FUJIFILM Corporation [JP/JP]; 26-30, Nishiazabu 2-chome, Minato-ku, Tokyo 1068620 (JP) (For All Designated States Except US).
MIZUTANI, Atsushi [JP/JP]; (JP) (For US Only).
INABA, Tadashi [JP/JP]; (JP) (For US Only).
KOYAMA, Akiko [JP/JP]; (JP) (For US Only)
Inventors: MIZUTANI, Atsushi; (JP).
INABA, Tadashi; (JP).
KOYAMA, Akiko; (JP)
Agent: IIDA, Toshizo; ISHII Bldg. 3F, 1-10, Shimbashi 3-chome, Minato-ku, Tokyo 1050004 (JP)
Priority Data:
2011-048281 04.03.2011 JP
2012-040234 27.02.2012 JP
Title (EN) A METHOD OF FORMING A CAPACITOR STRUCTURE, AND A SILICON ETCHING LIQUID USED IN THIS METHOD
(FR) PROCÉDÉ DE FORMATION D'UNE STRUCTURE DE CONDENSATEUR ET LIQUIDE DE GRAVURE AU SILICIUM UTILISÉ DANS CE PROCÉDÉ
Abstract: front page image
(EN)A method of forming a capacitor structure, which comprises: applying a silicon etching liquid which contains an alkali compound and a hydroxylamine compound in combination, with the pH adjusted to 11 or more, to a polycrystalline silicon film or an amorphous silicon film, removing a part or all of the polycrystalline silicon film or amorphous silicon film, and forming concave and convex shapes that constitute a capacitor.
(FR)La présente invention concerne un procédé de formation d'une structure de condensateur consistant à : appliquer un liquide de gravure au silicium contenant un composé alcalin et un composé hydroxylamine en combinaison, le pH étant réglé sur une valeur supérieure ou égale à 11, sur un film en silicium polycrystallin ou un film en silicium amorphe, retirer une partie ou l'intégralité du film en silicium polycrystallin ou du film en silicium amorphe et façonner des formes concaves et convexes constituant un condensateur.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)