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Pub. No.:    WO/2012/121030    International Application No.:    PCT/JP2012/054584
Publication Date: 13.09.2012 International Filing Date: 24.02.2012
G01L 9/00 (2006.01), H01L 29/84 (2006.01)
Applicants: OMRON CORPORATION [JP/JP]; 801, Minamifudodo-cho, Horikawahigashiiru, Shiokoji-dori, Shimogyo-ku, Kyoto-shi, Kyoto 6008530 (JP) (For All Designated States Except US).
TANAKA, Junichi; (For US Only).
SHIOZAKI, Masayoshi; (For US Only).
SASAKI, Sho; (For US Only).
BAN, Kenichi; (For US Only).
SHIMIZU, Masao; (For US Only).
ADACHI, Yoshitaka; (For US Only).
KANAI, Akinobu; (For US Only)
Inventors: TANAKA, Junichi; .
SHIOZAKI, Masayoshi; .
SASAKI, Sho; .
BAN, Kenichi; .
SHIMIZU, Masao; .
ADACHI, Yoshitaka; .
KANAI, Akinobu;
Agent: MASUI, Yoshihisa; HARAKENZO WORLD PATENT & TRADEMARK, Daiwa Minamimorimachi Building, 2-6, Tenjinbashi 2-chome Kita, Kita-ku, Osaka-shi, Osaka 5300041 (JP)
Priority Data:
2011-053620 10.03.2011 JP
(JA) 絶対圧力センサ
Abstract: front page image
(EN)This absolute pressure sensor (1) is formed by joining a cap substrate (20) in a manner so as to close a cavity (13) to a sensor substrate (10) wherein a plurality of piezoresistors (12, 12) are formed at the rim of a diaphragm (11), and the cavity (13) is formed at the surface that is on the reverse side from the surface at which the piezoresistors (12, 12) are formed. The thickness (T2) of the cavity (13) is at least the thickness (T3) of the cap substrate (20). As a result, it is possible to provide an absolute pressure sensor that can have a reduced overall thickness of the absolute pressure sensor.
(FR)La présente invention concerne un capteur de pression absolue (1) qui est formé par la jonction d'un substrat de chapeau (20) de manière à fermer une cavité (13) avec un substrat de capteur (10) dans lequel est formée une pluralité de piézorésistances (12, 12) sur le bord d'une membrane (11), et la cavité (13) est formée à la surface qui se situe sur le côté inverse de la surface où sont formées les piézorésistances (12, 12). L'épaisseur (T2) de la cavité (13) correspond au moins à l'épaisseur (T3) du substrat de chapeau (20). Il en résulte qu'il est possible de proposer un capteur de pression absolue qui peut être d'une épaisseur globale réduite.
(JA) 本発明の絶対圧力センサ(1)は、ダイアフラム(11)の周縁に複数のピエゾ抵抗(12・12)子を形成し、該ピエゾ抵抗(12・12)の形成面とは反対側の面にキャビティ(13)を形成したセンサ基板(10)に、キャビティ(13)を閉じるようにキャップ基板(20)を接合してなる。キャビティ(13)の厚み(T2)は、キャップ基板(20)の厚み(T3)以上となっている。これにより、絶対圧力センサの全体厚みを小さくし得る絶対圧力センサを提供することができる。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)