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1. (WO2012120472) SUPPLY APPARATUS AND METHOD OF SOLID MATERIAL GAS
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2012/120472 International Application No.: PCT/IB2012/051094
Publication Date: 13.09.2012 International Filing Date: 08.03.2012
IPC:
H01L 21/205 (2006.01) ,C23C 16/448 (2006.01) ,H01L 21/31 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
448
characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
Applicants: YANAGITA, Tomoko[JP/JP]; JP (UsOnly)
KOURA, Terumasa[JP/JP]; JP (UsOnly)
L'AIR LIQUIDE SOCIETE, ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE[FR/FR]; 75 quai d'Orsay F-75007 Paris, FR (AllExceptUS)
Inventors: YANAGITA, Tomoko; JP
KOURA, Terumasa; JP
Priority Data:
2011-05043108.03.2011JP
Title (EN) SUPPLY APPARATUS AND METHOD OF SOLID MATERIAL GAS
(FR) APPAREIL ET PROCÉDÉ D'ALIMENTATION D'UN GAZ DE MATÉRIAU SOLIDE
Abstract:
(EN) [Problem to Be Solved] To supply solid material gas at a stable concentration with a simple method and configuration, and precisely detect the remaining amount of solid material with a simple method. [Means for Solving the Problem] An apparatus and method characterized in that it aims at treating solid material S that can be sublimated and supplied at a specified rate by carrier gas C, and is equipped with carrier gas supply section 1, carrier gas dispersion means 2, dispersion chamber 3 that houses dispersion means 2 and disperses supplied carrier gas C, filling layer 4, supply-out chamber 5 that merges solid material gas G supplied from filling layer 4, supply-out section 6 of solid material gas G, first mesh section 7 that partitions dispersion chamber 3 and filling layer 4, and second mesh section 8 that partitions filling layer 4 and supply-out chamber 5.
(FR) L'objet de la présente invention est de fournir un gaz de matériau solide à une concentration stable à l'aide d'un procédé et d'une configuration simples et de détecter avec précision la quantité restante de matériau solide à l'aide d'un procédé simple. La présente invention a trait à un appareil et à un procédé caractérisés en ce qu'ils ont pour objectif de traiter le matériau solide (S) qui peut être sublimé et fourni à une vitesse spécifiée par un gaz porteur (C), et en ce qu'ils sont équipés d'une section d'alimentation en gaz porteur (1), d'un moyen de dispersion de gaz porteur (2), d'une chambre de dispersion (3) qui loge le moyen de dispersion (2) et disperse le gaz porteur (C) fourni, d'une couche de remplissage (4), d'une chambre d'alimentation extérieure (5) qui fusionne le gaz de matériau solide (G) fourni à partir de la couche de remplissage (4), d'une section d'alimentation extérieure (6) de gaz de matériau solide (G), d'une première section de maille (7) qui sépare la chambre de dispersion (3) et la couche de remplissage (4) et d'une seconde section de maille (8) qui sépare la couche de remplissage (4) et la chambre d'alimentation extérieure (5).
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)