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1. (WO2012118596) SEMICONDUCTOR LASERS WITH INDIUM CONTAINING CLADDING LAYERS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/118596    International Application No.:    PCT/US2012/023629
Publication Date: 07.09.2012 International Filing Date: 02.02.2012
IPC:
H01S 5/343 (2006.01), H01S 5/32 (2006.01)
Applicants: CORNING INCORPORATED [US/US]; 1 Riverfront Plaza Corning, New York 14831 (US) (For All Designated States Except US).
BHAT, Rajaram [US/US]; (US) (For US Only).
SIZOV, Dmitry Sergeevich [RU/US]; (US) (For US Only).
ZAH, Chung-En [US/US]; (US) (For US Only)
Inventors: BHAT, Rajaram; (US).
SIZOV, Dmitry Sergeevich; (US).
ZAH, Chung-En; (US)
Agent: SHORT, Svetlana Z; Corning Incorporated Intellectual Property Department SP-Ti-03-01 Corning, New York 14831 (US)
Priority Data:
61/447,245 28.02.2011 US
Title (EN) SEMICONDUCTOR LASERS WITH INDIUM CONTAINING CLADDING LAYERS
(FR) LASERS À SEMI-CONDUCTEURS À COUCHES DE REVÊTEMENT CONTENANT DE L'INDIUM
Abstract: front page image
(EN)An embodiment of semiconductor laser comprising: (a) a GaN, AlGaN, InGaN, or AlN substrate; (b) an n-doped cladding layer situated over the substrate; (c) a p-doped cladding layer situated over the n-doped; (d) at least one active layer situated between the n-doped and the p-doped cladding layer, and at least one of said cladding layers comprises a superstructure structure of AlInGaN/GaN, AlInGaN/AlGaN, AlInGaN//InGaN or AlInGaN/AlN with the composition such that the total of lattice mismatch strain of the whole structure does not exceed 40 nm%.
(FR)L'invention porte sur un mode de réalisation d'un laser à semi-conducteur qui comporte : (a) un substrat de GaN, d'AlGaN, d'InGaN ou d'AlN ; (b) une couche de revêtement dopée n, située sur le substrat ; (c) une couche de revêtement dopée p, située sur la couche dopée n ; (d) au moins une couche activée, située entre les couches de revêtement dopée n et dopée p, et au moins l'une desdites couches de revêtement comporte une structure de superstructure d'AlInGaN/GaN, d'AlInGaN/AlGaN, d'AlInGaN//InGaN ou d'AlInGaN/AlN, la composition étant telle que le total de déformation de désaccord de réseau de la structure totale ne dépasse pas 40 nm%.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)