WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2012118350) METHOD FOR N-DOPING GRAPHENE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/118350    International Application No.:    PCT/KR2012/001589
Publication Date: 07.09.2012 International Filing Date: 02.03.2012
IPC:
C01B 31/02 (2006.01), H01L 21/329 (2006.01), H01L 21/761 (2006.01)
Applicants: GRAPHENE SQUARE INC. [KR/KR]; (Samseong-dong), 301 18, Bongeunsa-ro 72-gil, Gangnam-gu Seoul 135-509 (KR) (For All Designated States Except US).
HONG, Byung Hee [KR/KR]; (KR) (For US Only).
KIM, Eun Seon [KR/KR]; (KR) (For US Only)
Inventors: HONG, Byung Hee; (KR).
KIM, Eun Seon; (KR)
Agent: MAPS INTELLECTUAL PROPERTY LAW FIRM; (Jeil Pharmaceutical Bldg., Banpo-dong), 4F, 343, Sapyoung-daero, Seocho-gu, Seoul 137-810 (KR)
Priority Data:
10-2011-0018425 02.03.2011 KR
Title (EN) METHOD FOR N-DOPING GRAPHENE
(FR) PROCÉDÉ POUR LE DOPAGE DE TYPE N DU GRAPHÈNE
(KO) 그래핀의 n-도핑 방법
Abstract: front page image
(EN)The present invention provides a method for n-doping graphene, an n-doped graphene prepared thereby, and an element including the n-dope graphene, the method comprising: a step of growing the graphene on a substrate by supplying a reaction gas containing a carbon source and heat on the substrate and reacting same; and n-doping the graphene by means of a doping solution or a vapor containing an n-type dopant.
(FR)La présente invention concerne un procédé de dopage de type N du graphène, un graphène N-dopé ainsi préparé, et un élément comprenant le graphène N-dopé, le procédé comprenant : une étape de croissance du graphène sur un substrat par apport d'un gaz de réaction contenant une source de carbone et de chaleur sur le substrat et en les faisant réagir; et le dopage de type N du graphène au moyen d'une solution dopante ou de vapeur contenant un dopant de type N.
(KO)본원은, 기재 상에 탄소 소스를 포함하는 반응 가스 및 열을 제공하여 반응시킴으로써 상기 기재 상에 그래핀을 성장시키는 단계; 및, n-형 도펀트를 포함하는 도핑 용액 또는 n-형 도펀트를 포함하는 증기에 의해 상기 그래핀을 n-도핑하는 단계: 를 포함하는, 그래핀의 n-도핑 방법, 이에 의해 제조되는 n-도핑된 그래핀 및 상기 n-도핑된 그래핀을 포함하는 소자를 제공한다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)