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1. (WO2012118220) ELECTRIC TOOL AND METHOD OF DRIVING ELECTRIC TOOL
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/118220    International Application No.:    PCT/JP2012/055504
Publication Date: 07.09.2012 International Filing Date: 28.02.2012
IPC:
B25C 1/06 (2006.01), B25F 5/00 (2006.01)
Applicants: Hitachi Koki Co., LTD. [JP/JP]; 15-1, Konan 2-chome, Minato-ku, Tokyo 1086020 (JP) (For All Designated States Except US).
SHIMA, Yukihiro; (For US Only).
FUNABASHI, Kazuhiko; (For US Only)
Inventors: SHIMA, Yukihiro; .
FUNABASHI, Kazuhiko;
Agent: Shin-Ei Patent Firm, P.C.; Toranomon East Bldg. 8F, 7-13, Nishi-Shimbashi 1-chome, Minato-ku, Tokyo 1050003 (JP)
Priority Data:
2011-042292 28.02.2011 JP
2011-042421 28.02.2011 JP
Title (EN) ELECTRIC TOOL AND METHOD OF DRIVING ELECTRIC TOOL
(FR) OUTIL ÉLECTRIQUE ET PROCÉDÉ DE COMMANDE DUDIT OUTIL ÉLECTRIQUE
Abstract: front page image
(EN)When a work stops without driving after a voltage across a capacitor circuit reaches a target boost voltage, a microcomputer switches an FET through a driver circuit. As a result, the voltage charged in the capacitor circuit is charged in a secondary battery through the FET, an inductance, and a parasitic diode of an FET.
(FR)Lorsqu'un travail est interrompu sans commande intentionnelle après qu'une tension parcourant un circuit à capacités a atteint une tension d'amplification cible, un micro-ordinateur commute un transistor à effet de champ par l'intermédiaire d'un circuit d'attaque. En conséquence, la tension chargée dans ledit circuit est chargée dans une batterie secondaire par l'intermédiaire du transistor à effet de champ, d'une inductance, et d'une diode parasite d'un transistor à effet de champ.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)