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Machine translation
1. (WO2012117871) PHOTOELECTRIC CONVERSION ELEMENT, AND PROCESS OF MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENT
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2012/117871 International Application No.: PCT/JP2012/053822
Publication Date: 07.09.2012 International Filing Date: 17.02.2012
IPC:
H01L 31/04 (2006.01)
Applicants: SANO, Yuichi; null (UsOnly)
YAMASHITA, Fumio; null (UsOnly)
HIRUKAWA, Shuichi; null (UsOnly)
SHARP KABUSHIKI KAISHA[JP/JP]; 22-22, Nagaike-cho, Abeno-ku, Osaka-shi, Osaka 5458522, JP (AllExceptUS)
Inventors: SANO, Yuichi; null
YAMASHITA, Fumio; null
HIRUKAWA, Shuichi; null
Agent: Fukami Patent Office, p.c.; Nakanoshima Central Tower, 2-7, Nakanoshima 2-chome, Kita-ku, Osaka-shi, Osaka 5300005, JP
Priority Data:
2011-04387601.03.2011JP
Title (EN) PHOTOELECTRIC CONVERSION ELEMENT, AND PROCESS OF MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENT
(FR) ÉLÉMENT DE CONVERSION PHOTOÉLECTRIQUE ET PROCÉDÉ DE FABRICATION D'ÉLÉMENT DE CONVERSION PHOTOÉLECTRIQUE
(JA) 光電変換素子および光電変換素子の製造方法
Abstract: front page image
(EN) A photoelectric conversion element comprising a semiconductor laminate (13), a silicon layer (9) arranged on the semiconductor laminate (13), and a diffusion/permeation layer (10) arranged on the silicon layer (9), wherein the silicon layer (9) has a surface having a face orientation (100) and the surface of the diffusion/permeation layer (10) has recessed and projected sections (11); and a process of manufacturing a photoelectric conversion element.
(FR) L'invention porte sur un élément de conversion photoélectrique comprenant un laminé semi-conducteur (13), une couche de silicium (9) agencée sur le laminé semi-conducteur (13) et une couche de diffusion/perméation (10) agencée sur la couche de silicium (9), la couche de silicium (9) ayant une surface ayant une orientation de face (100) et la surface de la couche de diffusion/perméation (10) ayant des sections renfoncées et en saillie (11) ; et sur un procédé de fabrication d'un élément de conversion photoélectrique.
(JA)  半導体積層体(13)と、半導体積層体(13)上に設けられたシリコン層(9)と、シリコン層(9)上に設けられた拡散透過層(10)とを備え、シリコン層(9)は面方位{100}の表面を有し、拡散透過層(10)の表面が凹凸(11)を有する光電変換素子と光電変換素子の製造方法である。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)