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1. (WO2012116353) LIGHT EMITTING DIODE WITH POLARIZATION CONTROL
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/116353    International Application No.:    PCT/US2012/026669
Publication Date: 30.08.2012 International Filing Date: 25.02.2012
IPC:
H01L 33/04 (2010.01), H01L 33/06 (2010.01)
Applicants: SENSOR ELECTRONIC TECHNOLOGY, INC. [US/US]; 1195 Atlas Road Columbia, SC 29209 (US) (For All Designated States Except US).
SHUR, Michael [US/US]; (US) (For US Only).
GASKA, Remigijus [US/US]; (US) (For US Only)
Inventors: SHUR, Michael; (US).
GASKA, Remigijus; (US)
Agent: LABATT, John, W.; LaBatt LLC PO Box 630 Valatie, NY 12184 (US)
Priority Data:
61/446,516 25.02.2011 US
13/404,703 24.02.2012 US
Title (EN) LIGHT EMITTING DIODE WITH POLARIZATION CONTROL
(FR) DIODE ÉLECTROLUMINESCENTE À COMMANDE DE POLARISATION
Abstract: front page image
(EN)An improved light emitting heterostructure is provided. The heterorestructure includes an active region having a set of barrier layers and a set of quantum wells, each of which is adjoined by a barrier layer. The quantum wells have a delta doped p-type sub-layer located therein, which results in a change of the band structure of the quantum well. The change can reduce the effects of polarization in the quantum wells, which can provide improved light emission from the active region.
(FR)L'invention porte sur une hétérostructure électroluminescente améliorée. L'hétérostructure comprend une région active ayant un ensemble de couches barrière et un ensemble de puits quantiques, à chacun desquels est adjointe une couche barrière. Les puits quantiques ont une sous-couche de type p, à dopage delta, située dans ceux-ci, ce qui conduit à un changement de la structure de bande de puits quantique. Le changement peut réduire les effets de polarisation dans les puits quantiques, ce qui peut fournir une émission de lumière améliorée à partir de la région active.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)