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1. (WO2012115743) LOW-TEMPERATURE SELECTIVE EPITAXIAL GROWTH OF SILICON FOR DEVICE INTEGRATION
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/115743    International Application No.:    PCT/US2012/022716
Publication Date: 30.08.2012 International Filing Date: 26.01.2012
IPC:
H01L 21/00 (2006.01)
Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION [US/US]; New Orchard Road Armonk, NY 10504 (US) (For All Designated States Except US).
HEKMATSHOAR-TABARI, Bahman [IR/US]; (US) (For US Only).
KHAKIFIROOZ, Ali [IR/US]; (US) (For US Only).
REZNICEK, Alexander [DE/US]; (US) (For US Only).
SADANA, Devendra, K. [US/US]; (US) (For US Only).
SHAHIDI, Ghavam, G. [IR/US]; (US) (For US Only).
SHAHRJERDI, Davood [IR/US]; (US) (For US Only)
Inventors: HEKMATSHOAR-TABARI, Bahman; (US).
KHAKIFIROOZ, Ali; (US).
REZNICEK, Alexander; (US).
SADANA, Devendra, K.; (US).
SHAHIDI, Ghavam, G.; (US).
SHAHRJERDI, Davood; (US)
Agent: BITETTO, James, J.; TUTUNJIAN & BITETTO, P.C. 425 Broadhollow Road, Suite 302 Melville, NY 11747 (US)
Priority Data:
13/032,866 23.02.2011 US
Title (EN) LOW-TEMPERATURE SELECTIVE EPITAXIAL GROWTH OF SILICON FOR DEVICE INTEGRATION
(FR) CROISSANCE ÉPITAXIALE SÉLECTIVE DE SILICIUM À BASSE TEMPÉRATURE POUR INTÉGRATION DE DISPOSITIF
Abstract: front page image
(EN)An epitaxy method includes providing (402) an exposed crystalline region of a substrate material. Silicon is epitaxially deposited (404) on the substrate material in a low temperature process wherein a deposition temperature is less than 500 degrees Celsius. A source gas is diluted (408) with a dilution gas with a gas ratio of dilution gas to source gas of less than 1000.
(FR)L'invention porte sur un procédé d'épitaxie qui comprend l'utilisation (402) d'une région cristalline exposée d'un matériau substrat. Du silicium est déposé de manière épitaxiale (404) sur le matériau substrat, dans un procédé à basse température, la température de dépôt étant inférieure à 500°C. Une source de gaz est diluée (408) avec un gaz de dilution en un rapport des gaz du gaz de dilution au gaz source inférieur à 1000.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)