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1. (WO2012115333) SUBSTRATE HAVING PENETRATING STRUCTURE AND MANUFACTURING METHOD THEREOF, PACKAGE DEVICE INCLUDING SUBSTRATE HAVING PENETRATING STRUCTURE AND MANUFACTURING METHOD THEREOF
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/115333    International Application No.:    PCT/KR2011/008748
Publication Date: 30.08.2012 International Filing Date: 16.11.2011
IPC:
H01L 23/48 (2006.01), H01L 21/60 (2006.01)
Applicants: INDUSTRY-ACADEMIC COOPERATION FOUNDATION, DANKOOK UNIVERSITY [KR/KR]; 152, Jukjeon-ro, Suji-gu, Yongin-si Gyeonggi-do 448-160 (KR) (For All Designated States Except US).
PARK, Jae Hyoung [KR/KR]; (KR) (For US Only).
LEE, Seung Ki [KR/KR]; (KR) (For US Only).
LEE, Ju Yong [KR/KR]; (KR) (For US Only)
Inventors: PARK, Jae Hyoung; (KR).
LEE, Seung Ki; (KR).
LEE, Ju Yong; (KR)
Agent: E-SANG PATENT & TRADEMARK LAW FIRM; 3F., Woodo Bldg. 82-2 Yangjae-dong, Seocho-gu Seoul 137-890 (KR)
Priority Data:
10-2011-0016618 24.02.2011 KR
10-2011-0107880 21.10.2011 KR
Title (EN) SUBSTRATE HAVING PENETRATING STRUCTURE AND MANUFACTURING METHOD THEREOF, PACKAGE DEVICE INCLUDING SUBSTRATE HAVING PENETRATING STRUCTURE AND MANUFACTURING METHOD THEREOF
(FR) SUBSTRAT AYANT UNE STRUCTURE PÉNÉTRANTE ET SON PROCÉDÉ DE FABRICATION, DISPOSITIF DE BOÎTIER COMPRENANT UN SUBSTRAT ET UNE STRUCTURE PÉNÉTRANTE ET SON PROCÉDÉ DE FABRICATION
(KO) 기판 관통 구조물 및 이의 제조방법, 기판 관통 구조물을 포함하는 소자의 패키지 및 이의 제조 방법
Abstract: front page image
(EN)Disclosed is a substrate having a penetrating structure, an electronic device package using the same and a manufacturing method thereof. First, a via hole pattern is formed by etching an upper surface of a first substrate. A pattern layer of a second substrate is formed on the first substrate by filling and reflowing materials consisting of the second substrate inside the via hole pattern. The via hole pattern is formed between pattern layers of the second substrate by patterning the upper surface of the first substrate. In addition, a via plug is formed to bury the via hole pattern using processes such as plating and the like, and is used in an electronic device package.
(FR)L'invention porte sur un substrat ayant une structure pénétrante, sur un boîtier de dispositif électronique utilisant celui-ci est sur son procédé de fabrication. Tout d'abord, un motif de trou d'interconnexion est formé par gravure d'une surface supérieure d'un premier substrat. Une couche de motif d'un second substrat est formée sur le premier substrat par remplissage et reflux de matériaux constitués du second substrat à l'intérieur du motif de trou d'interconnexion. Le motif de trou d'interconnexion est formé entre des couches de motif de second substrat par formation de motifs sur la surface supérieure du premier substrat. En outre, un bouchon de trou d'interconnexion est formé pour enfouir le motif de trou d'interconnexion à l'aide de procédés tels que placage et similaires, et est utilisé dans un boîtier de dispositif électronique.
(KO)기판 관통 구조물, 이를 이용하는 전자 소자의 패키지 및 이들의 제조방법이 개시된다. 먼저, 제1 기판의 상면을 식각하여 비아 홀(via hole) 패턴을 형성한다. 비아 홀 패턴의 내부에 제2 기판을 구성하는 물질을 리플로시켜 채움으로써, 제1 기판에 제2 기판의 패턴층을 형성한다. 제1 기판의 상면을 패터닝하여 제2 기판의 패턴층 사이에 비아 홀 패턴을 형성한다. 또한, 도금 등의 공정을 이용하여 비아 홀 패턴을 매립하는 비아 플러그를 형성하고, 이를 전자 소자의 패키지에 활용한다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)