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1. (WO2012114935) FILM FORMING METHOD AND FILM FORMING DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/114935    International Application No.:    PCT/JP2012/053356
Publication Date: 30.08.2012 International Filing Date: 14.02.2012
IPC:
H01L 21/225 (2006.01), H01L 21/31 (2006.01), H01L 21/316 (2006.01), H01L 31/04 (2006.01)
Applicants: Sankei Engineering Co., Ltd. [JP/JP]; 2-14-2, Shinyokohama, Kohoku-ku, Yokohama-shi, Kanagawa 2220033 (JP) (For All Designated States Except US).
HONMA, Koji [JP/JP]; (JP) (For US Only).
INUZUKA, Hitoshi [JP/JP]; (JP) (For US Only)
Inventors: HONMA, Koji; (JP).
INUZUKA, Hitoshi; (JP)
Agent: INADA, Hiroaki; Patent Attorneys Shinpo, 1-20-10-203, Takadanobaba, Shinjuku-ku Tokyo 1690075 (JP)
Priority Data:
2011-034440 21.02.2011 JP
Title (EN) FILM FORMING METHOD AND FILM FORMING DEVICE
(FR) PROCÉDÉ DE FORMATION D'UN FILM ET DISPOSITIF DE FORMATION D'UN FILM
(JA) 成膜方法及び成膜装置
Abstract: front page image
(EN)[Problem] To provide a film forming method, etc., which efficiently forms a film at atmospheric pressure which includes a high concentration of impurities without using toxic gases. [Solution] A film forming method has a configuration of heat vaporizing a solid source of an impurity such as boron or phosphorous pentoxide and making a gas of same, and by discharging the obtained gas upon the obverse face of a preheated substrate, forming a film upon the substrate which includes the impurity.
(FR)La présente invention vise à pourvoir à un procédé de formation d'un film, etc., qui permet de former efficacement à la pression atmosphérique un film qui contient une concentration élevée d'impuretés, sans utilisation de gaz toxiques. A cet effet, un procédé de formation d'un film comprend les étapes suivantes : vaporiser à chaud une source solide d'impureté, tel que du bore ou du pentoxyde phosphoreux, et produire un gaz ; et décharger le gaz obtenu sur la face verso d'un substrat préchauffé, pour former sur le substrat un film qui contient l'impureté.
(JA)【課題】有毒なガスを使用せず、大気圧下で効率よく高濃度の不純物を含む膜を成膜する成膜方法等を提供する。 【解決手段】成膜方法を、ボロン又は五酸化リンなどの不純物の固体ソースを加熱蒸発させてガスを発生させ、得られたガスを予熱された基板の表面に噴射することによって前記基板上に不純物を含有する膜を成膜する構成とする。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)