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1. (WO2012114688) ACTIVE MATRIX SUBSTRATE, DISPLAY DEVICE, AND SHORT CIRCUIT DEFECT CORRECTION METHOD FOR ACTIVE MATRIX SUBSTRATE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/114688    International Application No.:    PCT/JP2012/001036
Publication Date: 30.08.2012 International Filing Date: 16.02.2012
IPC:
G02F 1/1368 (2006.01), G09F 9/00 (2006.01), G09F 9/30 (2006.01)
Applicants: SHARP KABUSHIKI KAISHA [JP/JP]; 22-22, Nagaike-cho, Abeno-ku, Osaka-shi, Osaka 5458522 (JP) (For All Designated States Except US).
KANAMORI, Teruki; (For US Only)
Inventors: KANAMORI, Teruki;
Agent: MAEDA & PARTNERS; Osaka-Marubeni Bldg.5F, 5-7, Hommachi 2-chome, Chuo-ku, Osaka-shi, Osaka 5410053 (JP)
Priority Data:
2011-035990 22.02.2011 JP
Title (EN) ACTIVE MATRIX SUBSTRATE, DISPLAY DEVICE, AND SHORT CIRCUIT DEFECT CORRECTION METHOD FOR ACTIVE MATRIX SUBSTRATE
(FR) SUBSTRAT À MATRICE ACTIVE, DISPOSITIF D'AFFICHAGE ET PROCÉDÉ DE CORRECTION DES DÉFAUTS DE COURT-CIRCUIT POUR UN SUBSTRAT À MATRICE ACTIVE
(JA) アクティブマトリクス基板、表示装置及びアクティブマトリクス基板の短絡欠陥修正方法
Abstract: front page image
(EN)At at least one of the points of intersection between each of a plurality of pixel electrodes (27) and retention capacitor wiring (22CsL), a slit-shaped correction hole (27S) for short circuit defect correction of adjacent pixel electrodes (27) is provided so as to straddle retention capacitor wiring (22CsL).
(FR)Selon l'invention, à au moins l'un des points d'intersection entre chaque électrode parmi une pluralité d'électrodes de pixels (27) et un conducteur de condensateur de rétention (22CsL), un trou de correction en forme de fente (27S) pour la correction des défauts de court-circuit entre électrodes de pixels adjacentes (27) est prévu afin d'enjamber le conducteur de condensateur de rétention (22CsL).
(JA)複数の画素電極(27)の各々の周縁部と保持容量配線(22CsL)の交差する部分の少なくとも一方には、隣接する画素電極(27)の短絡欠陥を修正するスリット状の修正孔(27S)が保持容量配線(22CsL)を跨ぐように設けられている。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)