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1. (WO2012111884) LAMINATE SUBSTRATE AND METHOD OF FABRICATING THE SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/111884    International Application No.:    PCT/KR2011/003645
Publication Date: 23.08.2012 International Filing Date: 17.05.2011
IPC:
H01L 33/02 (2010.01), H01L 33/16 (2010.01), H01L 21/20 (2006.01)
Applicants: SEOUL OPTO DEVICE CO., LTD. [KR/KR]; 1B-36, 727-5, Wonsi-dong Danwon-gu, Ansan-si Gyeonggi-do 425-851 (KR) (For All Designated States Except US).
SAKAI, Shiro [JP/JP]; (JP) (For US Only)
Inventors: SAKAI, Shiro; (JP)
Agent: AIP PATENT & LAW FIRM; Shinwon Building 8F 823-14, Yeoksam-dong Gangnam-gu, Seoul 135-933 (KR)
Priority Data:
2011-030875 16.02.2011 JP
Title (EN) LAMINATE SUBSTRATE AND METHOD OF FABRICATING THE SAME
(FR) SUBSTRAT STRATIFIÉ, ET PROCÉDÉ DE FABRICATION ASSOCIÉ
Abstract: front page image
(EN)Embodiments of the invention provide a crystalline aluminum carbide layer, a laminate substrate having the crystalline aluminum carbide layer formed thereon, and a method of fabricating the same. The laminate substrate has a GaN layer including a GaN crystal and an AlC layer including an AlC crystal. Further, the method of fabricating the laminate substrate, which has the AIN layer including the AIN crystal and the AlC layer including the AlC crystal, includes supplying a carbon containing gas and an aluminum containing gas to grow the AlC layer.
(FR)Des modes de réalisation de la présente invention concernent une couche de carbure d'aluminium cristallin, un substrat stratifié sur lequel est formée la couche de carbure d'aluminium cristallin, ainsi qu'un procédé de fabrication associé. Le substrat stratifié comporte une couche de GaN comprenant un cristal de GaN, et une couche d'AlC comprenant un cristal d'AlC. En outre, le procédé de fabrication du substrat stratifié, qui comporte la couche d'AlN comprenant le cristal d'AlN et la couche d'AlC comprenant le cristal d'AlC, intègre une étape d'apport en carbone contenant du gaz et en aluminium contenant du gaz afin de permettre la croissance de la couche d'AlC.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)