Processing

Please wait...

Settings

Settings

Goto Application

1. WO2012111295 - ATOMIC LAYER DEPOSITION APPARATUS AND ATOMIC LAYER DEPOSITION METHOD

Publication Number WO/2012/111295
Publication Date 23.08.2012
International Application No. PCT/JP2012/000915
International Filing Date 10.02.2012
IPC
C23C 16/448 2006.1
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
448characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
C23C 16/455 2006.1
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
455characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
CPC
C23C 16/448
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
448characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
C23C 16/4485
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
448characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
4485by evaporation without using carrier gas in contact with the source material
C23C 16/455
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
455characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
C23C 16/45542
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
455characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
45523Pulsed gas flow or change of composition over time
45525Atomic layer deposition [ALD]
45527characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
45536Use of plasma, radiation or electromagnetic fields
45542Plasma being used non-continuously during the ALD reactions
Applicants
  • 三井造船株式会社 MITSUI ENGINEERING & SHIPBUILDING CO., LTD. [JP]/[JP] (AllExceptUS)
  • 宮武 直正 MIYATAKE, Naomasa [JP]/[JP] (UsOnly)
Inventors
  • 宮武 直正 MIYATAKE, Naomasa
Agents
  • グローバル・アイピー東京特許業務法人 GLOBAL IP TOKYO
Priority Data
2011-02862314.02.2011JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) ATOMIC LAYER DEPOSITION APPARATUS AND ATOMIC LAYER DEPOSITION METHOD
(FR) APPAREIL DE DÉPÔT DE COUCHE ATOMIQUE ET PROCÉDÉ DE DÉPÔT DE COUCHE ATOMIQUE
(JA) 原子層堆積装置及び原子層堆積方法
Abstract
(EN) This atomic layer deposition apparatus which forms a thin film on a substrate has: a film-forming container having a raw material gas supply port and a reaction gas supply port formed therein; a raw material gas supply unit, which includes a liquid raw material storage unit that stores a liquid raw material, i.e., a raw material of the thin film, and a vaporization control unit that directly vaporizes the liquid raw material stored in the liquid raw material storage unit and controls a flow quantity, and which supplies a raw material gas to the raw material gas supply port; a reaction gas supply unit, which supplies to the reaction gas supply port the reaction gas that forms the thin film by reacting to the raw material gas; a control unit, which controls the raw material gas supply unit and the reaction gas supply unit such that the raw material gas and the reaction gas are alternately supplied; a collision plate that is disposed such that the raw material gas supplied from the raw material gas supply port collides with the plate; and a temperature adjusting unit, which adjusts the temperature of the collision plate.
(FR) La présente invention se rapporte à un appareil de dépôt de couche atomique qui forme un film mince sur un substrat et qui comprend : un contenant de formation de film dans lequel sont formés un orifice d'alimentation en gaz matière première et un orifice d'alimentation en gaz de réaction ; une unité d'alimentation en gaz matière première qui comprend une unité de stockage de matière première liquide qui stocke une matière première liquide, à savoir une matière première du film mince, et une unité de commande de vaporisation qui vaporise directement la matière première liquide stockée dans l'unité de stockage de matière première liquide et qui régule une quantité d'écoulement, et qui fournit un gaz matière première à l'orifice d'alimentation en gaz matière première ; une unité d'alimentation en gaz de réaction qui fournit à l'orifice d'alimentation en gaz de réaction le gaz de réaction qui forme le film mince par réaction avec le gaz matière première ; une unité de commande qui commande l'unité d'alimentation en gaz matière première et l'unité d'alimentation en gaz de réaction de telle sorte que le gaz matière première et le gaz de réaction soient fournis en alternance ; et une plaque de collision qui est disposée de telle sorte que le gaz matière première fourni depuis l'orifice d'alimentation en gaz matière première heurte la plaque ; et une unité de réglage de la température qui règle la température de la plaque de collision.
(JA)  基板上に薄膜を形成する原子層堆積装置は、原料ガス供給口と反応ガス供給口とが形成された成膜容器と、前記薄膜の原料である液体原料を貯蔵する液体原料貯蔵部と、前記液体原料貯蔵部に貯蔵された前記液体原料を直接気化し、流量を制御する気化制御部と、を含み、原料ガスを前記原料ガス供給口に供給する原料ガス供給部と、前記原料ガスと反応して前記薄膜を形成する反応ガスを前記反応ガス供給口に供給する反応ガス供給部と、前記原料ガスと前記反応ガスとが交互に供給されるように、前記原料ガス供給部と前記反応ガス供給部とを制御する制御部と、前記原料ガス供給口から供給される前記原料ガスが衝突するように配置される衝立板と、前記衝立板の温度を調節する温度調節部と、を有する。
Latest bibliographic data on file with the International Bureau