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1. (WO2012111009) HEAVILY DOPED SEMICONDUCTOR NANOPARTICLES
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/111009    International Application No.:    PCT/IL2012/050046
Publication Date: 23.08.2012 International Filing Date: 14.02.2012
IPC:
H01L 29/06 (2006.01), B01J 13/00 (2006.01), C09K 11/08 (2006.01), C09K 11/62 (2006.01)
Applicants: YISSUM RESEARCH DEVELOPMENT COMPANY OF THE HEBREW UNIVERSITY OF JERUSALEM LTD. [IL/IL]; Hi Tech Park Edmond Safra Campus Givat Ram 91390 Jerusalem (IL) (For All Designated States Except US).
RAMOT AT TEL-AVIV UNIVERSITY LTD. [IL/IL]; Tel Aviv University Campus The Senate Building, Floor-1 P.O. Box 39296 61392 Tel Aviv (IL) (For All Designated States Except US).
COHEN, Guy [IL/IL]; (IL) (For US Only).
MILLO, Oded [IL/IL]; (IL) (For US Only).
MOCATTA, David [IL/IL]; (IL) (For US Only).
RABANI, Eran [IL/IL]; (IL) (For US Only).
BANIN, Uri [IL/IL]; (IL) (For US Only)
Inventors: COHEN, Guy; (IL).
MILLO, Oded; (IL).
MOCATTA, David; (IL).
RABANI, Eran; (IL).
BANIN, Uri; (IL)
Agent: REINHOLD COHN AND PARTNERS; P.O.B. 13239 61131 Tel Aviv (IL)
Priority Data:
61/442,522 14.02.2011 US
Title (EN) HEAVILY DOPED SEMICONDUCTOR NANOPARTICLES
(FR) NANOPARTICULES SEMI-CONDUCTRICES LOURDEMENT DOPÉES
Abstract: front page image
(EN)Herein, provided are heavily doped colloidal semiconductor nanocrystals and a process for introducing an impurity to semiconductor nanoparticles, providing control of band gap, Fermi energy and presence of charge carriers. The method is demonstrated using InAs colloidal nanocrystals, which are initially undoped, and are metal-doped (Cu, Ag, Au) by adding a metal salt solution.
(FR)La présente invention concerne des nanocristaux semi-conducteurs colloïdaux lourdement dopés et un processus consistant à introduire une impureté dans des nanoparticules semi-conductrices, produisant un contrôle de la bande interdite, de l'énergie Fermi et la présence de porteurs de charges.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)