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Pub. No.:    WO/2012/108252    International Application No.:    PCT/JP2012/051281
Publication Date: 16.08.2012 International Filing Date: 16.01.2012
B06B 1/02 (2006.01)
Applicants: CANON KABUSHIKI KAISHA [JP/JP]; 30-2, Shimomaruko 3-chome, Ohta-ku, Tokyo 1468501 (JP) (For All Designated States Except US).
KATO, Ayako [JP/JP]; (JP) (For US Only).
TORASHIMA, Kazutoshi [JP/JP]; (JP) (For US Only).
SOEDA, Yasuhiro [JP/JP]; (JP) (For US Only).
WATANABE, Shinichiro [JP/JP]; (JP) (For US Only)
Inventors: KATO, Ayako; (JP).
TORASHIMA, Kazutoshi; (JP).
SOEDA, Yasuhiro; (JP).
WATANABE, Shinichiro; (JP)
Agent: OKABE, Yuzuru; No. 602, Fuji Bldg., 2-3, Marunouchi 3-chome, Chiyoda-ku, Tokyo 1000005 (JP)
Priority Data:
2011-027965 11.02.2011 JP
Abstract: front page image
(EN)Provided is a capacitive electromechanical transducer manufactured by fusion bonding, which is capable of enhancing the performance by reducing fluctuations in initial deformation among diaphragms caused at positions having difference boundary conditions such as the bonding area. The capacitive electromechanical transducer includes a device (101), the device including at least one cellular structure (102) including: a silicon substrate; a diaphragm; and a diaphragm supporting portion configured to support the diaphragm so that a gap is formed between one surface of the silicon substrate and the diaphragm. The device has, in its periphery, a groove (103) formed in a layer shared with the diaphragm supporting portion.
(FR)L'invention porte sur un transducteur électromécanique capacitif fabriqué par collage par fusion, qui est apte à améliorer la performance grâce à une réduction des fluctuations de la déformation initiale parmi les diaphragmes, qui sont provoquées en des positions ayant différentes conditions de limites, telles que la zone de collage. Le transducteur électromécanique capacitif comprend un dispositif (101), le dispositif comprenant au moins une structure cellulaire (102) qui comporte : un substrat en silicium ; un diaphragme ; et une partie support de diaphragme configurée pour supporter le diaphragme de telle sorte qu'un espace est formé entre une surface du substrat en silicium et le diaphragme. Le dispositif présente, dans sa périphérie, une rainure (103) formée dans une couche qui est partagée avec la partie support de diaphragme.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)